Semiconductor structure and fabrication method thereof
AssigneeChangxin Memory Technologies, Inc.
InventorTong Wu
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Abstract
The present disclosure provides a semiconductor structure and a fabrication method thereof. The semiconductor structure includes: a base, wherein the base is provided with a first surface and a second surface that are opposite to each other; a magnetic core, wherein the magnetic core is located in the base, and an orthographic projection of the magnetic core on the first surface is a closed ring pattern; a dielectric layer, wherein the dielectric layer is located on the second surface; and a solenoid-shaped metal layer, wherein the metal layer is located in the base and the dielectric layer and is wound around the magnetic core; the metal layer is an integrated structure; the metal layer and the magnetic core are spaced apart from each other; part of the metal layer is exposed on the first surface.
Claims7
A semiconductor structure, comprising:
- a base, wherein the base is provided with a first surface and a second surface that are opposite to each other;
- a magnetic core, wherein the magnetic core is located in the base, and an orthographic projection of the magnetic core on the first surface is a closed ring pattern;
- a dielectric layer, wherein the dielectric layer is located on the second surface;
- and
- a solenoid-shaped metal layer, wherein the metal layer is located in the base and the dielectric layer and is wound around the magnetic core;
- the metal layer and the magnetic core are spaced apart from each other;
- part of the metal layer is exposed on the first surface;
- and part of the metal layer is exposed on a surface of the dielectric layer away from the base;
- a first through hole;
- the first through hole penetrates through the base and the dielectric layer;
- and the first through hole exposes part of the magnetic core and part of the metal layer.
Dependencies are inferred from the claim text.