Semiconductor memory device and method of operating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTaeyun Lee, Yohan Lee
Life of this patent
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Abstract
The present disclosure relates to semiconductor memory devices and methods of operating a semiconductor memory device. One example method includes setting a sensing node of a page buffer to a first voltage, detecting a deviation in operating characteristics of a first sense amplifier and a second sense amplifier with respect to the first voltage, and sequentially repeating a first internal operation for at least two different operating times in the first sense amplifier, the second sense amplifier, or the first sense amplifier and the second sense amplifier based on the deviation in operating characteristics of the first sense amplifier and the second sense amplifier.
Claims19
A method of operating a semiconductor memory device, comprising:
- setting a sensing node of a page buffer to a first voltage;
- detecting a deviation in operating characteristics of a first sense amplifier and a second sense amplifier with respect to the first voltage based on a first sensing result and a second sensing result;
- and
- sequentially repeating a first internal operation for at least two different operating times in the first sense amplifier, the second sense amplifier, or both the first sense amplifier and the second sense amplifier based on the deviation in operating characteristics of the first sense amplifier and the second sense amplifier,
- wherein detecting the deviation in operating characteristics of the first sense amplifier and the second sense amplifier comprises:
- sensing the sensing node in the first sense amplifier to obtain the first sensing result;
- and
- sensing the sensing node in the second sense amplifier to obtain the second sensing result, wherein sensing the sensing node in the second sense amplifier and sensing the sensing node in the first sense amplifier are performed at a same time.
A method of operating a semiconductor memory device, comprising:
- performing a program operation for a memory cell using a plurality of program pulses;
- performing a program verify operation which verifies a result of the program operation that has been performed using one of the plurality of program pulses by sequentially sensing a sensing node included in a page buffer and electrically connected to the memory cell at least 3 times through a coarse sensing amplifier and a fine sensing amplifier;
- and
- setting different sensing operation times for the sensing node based on a difference between a trip voltage of the coarse sensing amplifier and a trip voltage of the fine sensing amplifier, before the program verify operation is performed.
A semiconductor memory device comprising a page buffer, wherein the page buffer comprises:
- a sensing node voltage setting circuit configured to apply a first voltage to a sensing node;
- a coarse sensing amplifier configured to sense the sensing node at the first voltage and to output a first sensing result based on sensing the sensing node at the first voltage;
- a fine sensing amplifier configured to sense the sensing node at the first voltage and to output a second sensing result based on the sensing node at the first voltage;
- and
- a first data latch configured to store a first value corresponding to the first sensing result and the second sensing result,
- wherein sensing the sensing node in the fine sensing amplifier and sensing the sensing node in the coarse sensing amplifier are performed at a same time.
Dependencies are inferred from the claim text.