Managing program operations in memory systems

A method, comprising:

• obtaining, by a peripheral circuit coupled to a memory cell array, a first temperature;
• in response to determining that the first temperature is at or above a predetermined threshold, applying, by the peripheral circuit, a first program voltage pulse with a first pulse width to a specified word line coupling memory cells of the memory cell array;
• obtaining, by the peripheral circuit, a second temperature;
• and
• in response to determining that the second temperature is below the predetermined threshold, applying, by the peripheral circuit, a second program voltage pulse with a second pulse width to the specified word line, wherein the second pulse width is larger than the first pulse width.

A system, comprising a memory device and a controller coupled to the memory device, wherein the memory device comprises:

• a memory cell array;
• and
• a peripheral circuit coupled to the memory cell array, wherein the peripheral circuit is configured to:
• obtain a first temperature;
• in response to determining that the first temperature is at or above a predetermined threshold, apply a first program voltage pulse with a first pulse width to a specified word line coupling memory cells of the memory cell array;
• obtain a second temperature;
• and
• in response to determining that the second temperature is below the predetermined threshold, apply a second program voltage pulse with a second pulse width to the specified word line, wherein the second pulse width is larger than the first pulse width.