Memory device and data accessing method thereof
AssigneeMacronix International Co., Ltd.
InventorsChun-Hsiung Hung, Hsin-Yi Ho
Life of this patent
Estimating the term…
Abstract
A data accessing method of a memory device includes the following steps. During a first time period, a read voltage is applied to a first read selected word line in a first memory cell block. During a first data reading time period in the first time period, at least one first memory cell string in the first memory cell block is activated. During a second time period, the read voltage is applied to a second read selected word line in a second memory cell block. The first time period partially overlaps the second time period. During a second data reading time period in the second time period, at least one second memory cell string in the second memory cell block is activated. The first data reading time period does not overlap the second data reading time period.
Claims20
A data accessing method of a memory device, comprising:
- applying a read voltage to a first read selected word line in a first memory cell block during a first time period;
- activating at least one first memory cell string in the first memory cell block during a first data reading time period in the first time period;
- applying the read voltage to a second read selected word line in a second memory cell block during a second time period, wherein the first time period partially overlaps the second time period;
- and
- activating at least one second memory cell string in the second memory cell block during a second data reading time period in the second time period, wherein the first data reading time period and the second data reading time period do not overlap each other.
A memory device comprising:
- a plurality of memory cell blocks;
- and
- a controller coupled to the plurality of memory cell blocks and configured to:
- apply a read voltage to a first read selected word line in a first memory cell block during a first time period;
- activate at least one first memory cell string in the first memory cell block during a first data reading time period in the first time period;
- apply the read voltage to a second read selected word line in a second memory cell block during a second time period, wherein the first time period partially overlaps the second time period;
- and
- activate at least one second memory cell string in the second memory cell block during a second data reading time period in the second time period, wherein the first data reading time period and the second data reading time period do not overlap each other.
A data accessing method of a memory device, comprising:
- dividing a plurality of memory cell blocks corresponding to a plurality of word lines of the memory device;
- setting a first memory cell block and a second memory cell block according to a reading order;
- when at least one first memory cell string of the first memory cell block is enabled to perform a reading operation, performing a pre-set operation on word lines of the second memory cell block;
- and
- after the reading operation of the at least one first memory cell string of the first memory cell block has been completed, enabling at least one second memory cell of the second memory cell block.
Dependencies are inferred from the claim text.