Offset voltage based operation method of memory system, data read method of memory and memory system

A data read method of a memory, comprising:

• receiving a data read command, wherein the data read command is used for instructing the memory to generate a read voltage according to an offset voltage value and apply the read voltage to a selected word line of N word lines, wherein the offset voltage value is determined according to a number N of the N word lines and offset voltage information, the N word lines are word lines adjacently disposed in a memory block of the memory, data is stored in K memory cells coupled with the N word lines, K and N are positive integers, and the offset voltage information is used for indicating the offset voltage value corresponding to N, wherein a memory cell of the K memory cells coupled with the selected word line is programmed into a plurality of programming states;
• and the offset voltage value is determined according to N, location information of the selected word line, a preset read voltage of a selected memory cell and the offset voltage information, the selected memory cell is the memory cell of the K memory cells coupled with the selected word line, the preset read voltage of the selected memory cell is a read voltage corresponding to a programming state of the selected memory cell, and the offset voltage information is further used for indicating the offset voltage value corresponding to N, the location information of the selected word line, and the preset read voltage of the selected memory cell;
• and
• generating the read voltage and applying the read voltage to the selected word line according to the data read command.

A memory system, comprising a controller and a memory coupled with the controller, wherein:

• the controller is configured to determine an offset voltage value corresponding to a selected word line of N word lines according to a number N of the N word lines and offset voltage information, wherein the N word lines are word lines adjacently disposed in a memory block of the memory, data is stored in K memory cells coupled with the N word lines, K and N are positive integers, and the offset voltage information is used for indicating the offset voltage value corresponding to N, wherein a memory cell of the K memory cells coupled with the selected word line is programmed into a plurality of programming states;
• the controller is further configured to:
• send a data read command to the memory, wherein the data read command is used for instructing the memory to generate a read voltage according to the offset voltage value and apply the read voltage to the selected word line;
• determine the offset voltage value corresponding to the selected word line according to N, location information of the selected word line, a preset read voltage of a selected memory cell and the offset voltage information, wherein the selected memory cell is the memory cell of the K memory cells coupled with the selected word line, the preset read voltage of the selected memory cell is a read voltage corresponding to a programming state of the selected memory cell;
• and
• the memory is configured to receive the data read command, and generate the read voltage and apply the read voltage to the selected word line according to the data read command.