Semiconductor structure and method for forming same

A semiconductor structure comprising:

• a substrate;
• a plurality of word lines located on a top surface of the substrate, wherein each of the word lines extends in a direction perpendicular to the top surface of the substrate, the plurality of word lines are arranged at intervals along a first direction, any two adjacent ones of the word lines are arranged in an at least partially staggered manner along the first direction, and the first direction is a direction parallel to the top surface of the substrate;
• and
• a plurality of semiconductor layers located above the top surface of the substrate, wherein each of the semiconductor layers comprises a plurality of active pillars arranged at intervals along the first direction, and the plurality of semiconductor layers are arranged at intervals in the direction perpendicular to the top surface of the substrate, each of the active pillars comprises a channel region, as wells as a drain region and a source region distributed at opposite sides of the channel region in a second direction, each of the word lines continuously covers a plurality of channel regions arranged at intervals in the direction perpendicular to the top surface of the substrate, the second direction is parallel to the top surface of the substrate, and the first direction is orthogonal to the second direction.