Integrated circuit including standard cell and method of manufacturing the integrated circuit

An integrated circuit comprising:

• a plurality of standard cells defined by a cell boundary and connected to one another through a plurality of metal-layer patterns,
• wherein each of the plurality of standard cells comprises:
• a plurality of function cells each including a logic circuit;
• and
• a plurality of filler cells, each placed adjacent to at least one of the plurality of function cells,
• each of the plurality of filler cells comprises one of a first type filler cell in which an active region extending in a first direction is formed and a second type filler cell in which an active region extending in the first direction is formed, and
• wherein each of the plurality of filler cells comprises:
• a front-end layer in which a pattern configuring a transistor is formed;
• a back-end layer in which a routing pattern providing routing of signals to another standard cell is formed;
• and
• a middle layer formed between the front-end layer and the back-end layer, and
• a density of a middle-layer pattern of the second type filler cell is lower than a density of a middle-layer pattern of the first type filler cell,
• wherein a plurality of wirings of each of the first type filler cell and the second type filler cell provide the routing of signals for adjacent ones of the plurality of standard cells,
• wherein the plurality of function cells comprise a first function cell in which an active region extending in the first direction is formed and a second function cell in which an active region extending in the first direction is formed,
• in the first function cell placed adjacent to the first type filler cell, a density of a contact formed between a corresponding metal-layer pattern and the active region of the first function cell to contact the active region of the first function cell has a first value,
• in the second function cell placed adjacent to the second type filler cell, a density of a contact formed between a corresponding metal-layer pattern and the active region of the second function cell to contact the active region of the second function cell has a second value, and
• the first value is less than the second value.

An integrated circuit comprising:

• a plurality of standard cells defined by a cell boundary and connected to one another through a plurality of metal-layer patterns,
• wherein each of the plurality of standard cells comprises:
• a plurality of function cells each including a logic circuit;
• and
• a plurality of filler cells, each placed adjacent to at least one of the plurality of function cells,
• each of the plurality of filler cells comprises one of a first type filler cell in which an active region extending in a first direction is formed and a second type filler cell in which an active region extending in the first direction is formed,
• wherein the first type filler cell and the second type filler cell are configured to have different structures between the active regions and the plurality of metal-layer patterns, the different structures electrically connecting the active regions and the plurality of metal-layer patterns,
• wherein each of the first type filler cell and the second type filler cell provide routing space for a signal for adjacent ones of the plurality of standard cells,
• wherein the plurality of function cells comprise a first function cell in which an active region extending in the first direction is formed and a second function cell in which an active region extending in the first direction is formed,
• in the first function cell placed adjacent to the first type filler cell, a density of a contact formed between a corresponding metal-layer pattern and the active region of the first function cell to contact the active region of the first function cell has a first value,
• in the second function cell placed adjacent to the second type filler cell, a density of a contact formed between a corresponding metal-layer pattern and the active region of the second function cell to contact the active region of the second function cell has a second value, and
• the first value is less than the second value.