In-memory bitwise operation circuit and method thereof
AssigneeMacronix International Co., Ltd.
InventorWen-Che Tsai
Life of this patent
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AssigneeMacronix International Co., Ltd.
InventorWen-Che Tsai
Estimating the term…
An in-memory bitwise operation circuit and method thereof are provided. The circuit includes a memory array, storing page data each having strings; a page buffer, storing the strings and selecting a portion of the strings as operands; a pop-count counter, receiving the operands and an operator flag, counting the number of bit 1 at corresponding bit positions of the operands, and generating a bitwise operation result corresponding to the operator; a bitwise operation processing unit, receiving and temporally storing the bitwise operation result, and outputting a final bitwise operation result when receiving a final result flag. In case that the operator is a last operator, the bitwise operation result is output as the final bitwise operation result. The circuit and method are suitable for 3D NAND flash memory that has high capacity and high performance.
An in-memory bitwise operation circuit, comprising:
An in-memory bitwise operation method, executed in a memory device, wherein the memory device comprises a pop-count counter, and the pop-count counter further comprises a plurality of pop-count counter units, wherein the in-memory bitwise operation method comprises:
Dependencies are inferred from the claim text.