Storage controller adjusting read voltage level, storage device including the same, and method of operating the same

A storage controller comprising:

• a read voltage level management circuit configured to:
• determine whether to adjust a read voltage level for reading second data, based on a status check operation of a non-volatile memory device sequentially storing first data and the second data;
• and
• generate offset information for adjusting the read voltage level based on a determination to adjust the read voltage level for reading the second data;
• and
• a command management circuit configured to:
• provide a first request to the non-volatile memory device for a first sequential read operation of the first data;
• receive the offset information from the read voltage level management circuit;
• and
• provide a second request to the non-volatile memory device for a second sequential read operation of the second data,
• wherein the first request indicates a row address and a column address of the first data, and
• wherein the second request indicates the offset information and sequentiality of the first data and the second data, and controls the non-volatile memory device to adjust the read voltage level while maintaining a sequential read operation.

A storage device comprising:

• a non-volatile memory device configured to sequentially store first data and second data;
• and
• a storage controller comprising:
• a read voltage level management circuit configured to:
• determine whether to adjust a read voltage level for reading the second data, based on a status check operation of the non-volatile memory device;
• and
• generate offset information for adjusting the read voltage level based on a determination to adjust the read voltage level for reading the second data;
• a command management circuit configured to:
• provide a first request to the non-volatile memory device for a first sequential read operation of the first data;
• receive the offset information from the read voltage level management circuit;
• and
• provide a second request to the non-volatile memory device for a second sequential read operation of the second data;
• and
• a buffer memory device configured to receive the first data and the second data from the non-volatile memory device,
• wherein the first request indicates a row address and a column address of the first data, and
• wherein the second request indicates the offset information and sequentiality of the first data and the second data, and controls the non-volatile memory device to adjust the read voltage level while maintaining a sequential read operation.