Memory with electrically programmable fuses and related tester
AssigneeEtron Technology, Inc.
InventorsHo-Yin Chen, Po-Hung Yang, Chun-Chia Chen
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Abstract
A memory with e-fuses includes a receiving circuit and a plurality of e-fuse groups. Each e-fuse group of the e-fuse groups is coupled to the receiving circuit through a corresponding bus group. The receiving circuit receives a plurality of blown signal sets each time and transmits each of the blown signal sets to a e-fuse group, and predetermined e-fuses of the e-fuse group are blown according to the each of the blown signal sets to adjust predetermined settings of the memory, and the each of the blown signal sets only corresponds to the e-fuse group. A number of the plurality of blown signal sets is not greater than a number of the e-fuse groups.
Claims17
A memory with electrically programmable fuses (e-fuses) comprising:
- a receiving circuit;
- and
- a plurality of e-fuse groups, wherein each of the plurality of e-fuse groups is coupled to the receiving circuit through a corresponding bus group;
- wherein the receiving circuit receives a plurality of blown signal sets generated by a tester after the tester finishes testing the memory and transmits each of the plurality of blown signal sets to an e-fuse group of the memory, predetermined e-fuses of the e-fuse group are blown according to the each of the plurality of blown signal sets to adjust predetermined settings of the memory, and the each of the plurality of blown signal sets only corresponds to the e-fuse group;
- wherein a number of the plurality of blown signal sets is not greater than a number of the e-fuse groups.
A memory with e-fuses comprising:
- a plurality of e-fuse groups, wherein each of partial e-fuse groups of the plurality of e-fuse groups receives a corresponding blown signal set to blow predetermined e-fuses of the each of the partial e-fuse groups to adjust predetermined settings of the memory, a number of the partial e-fuse groups is not greater than a number of the e-fuse groups.
A tester applied to a memory with e-fuses, wherein the memory comprises L e-fuse groups, the tester generating a plurality of blown signal sets to the memory after the tester finishes testing the memory, wherein each blown signal set of the plurality of blown signal sets has a code which makes the each blown signal set be transmitted to a corresponding e-fuse group of the L e-fuse groups, predetermined e-fuses of the corresponding e-fuse group are blown according to the each blown signal set to adjust predetermined settings of the memory, L is an integer greater than 1, a number of the at least one blown signal set is not greater than L, and the tester generates the plurality of blown signal sets according to a test result.
Dependencies are inferred from the claim text.