Lower vread for erased word lines in post-write dummy reads

A method for operating a memory device, the method comprising:

• performing a dummy read operation to transition memory cells of a memory block from a first read condition to a second read condition, wherein performing the dummy read operation includes
• subsequent to performing a programming operation on a selected word line and prior to performing a programming operation on a next word line;
• supplying a first voltage pulse to bias the selected word line and previously programmed word lines in the memory block;
• and
• while supplying the first voltage pulse to the selected word line and the previously programmed word lines, supplying a second voltage pulse to bias unprogrammed word lines in the memory block including the next word line, wherein the second voltage pulse has a lower magnitude than the first voltage pulse.

A memory device, comprising:

• a memory block comprising a plurality of memory cells;
• and
• control means for performing a dummy read operation to transition memory cells of the memory block from a first read condition to a second read condition the control means, subsequent to performing a programming operation on a selected word line and prior to performing a programming operation on a next word line, performs the dummy read operation by
• supplying a first voltage pulse to bias the selected word line and previously programmed word lines in the memory block, and
• while supplying the first voltage pulse to the selected word line and the previously programmed word lines, supplying a second voltage pulse to bias unprogrammed word lines in the memory block including the next word line, wherein the second voltage pulse has a lower magnitude than the first voltage pulse.