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US 12,608,131 B2Granted
Storage device and memory control device
AssigneeSK hynix Inc.
InventorsJae Yong Son, Hong Sik Yun
Life of this patent
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Abstract
An embodiment of the present disclosure may provide a read retry table optimized for a memory on the basis of a distribution of read voltages of word lines included in the corresponding memory, and by changing a method of setting a read retry table depending on the number of sample data, may provide an optimal read retry table even for a memory with insufficient sample data.
Claims17
A storage device comprising:
- a memory including a plurality of memory cells arranged between a plurality of word lines and a plurality of bit lines, and storing a read retry table;
- and
- a controller configured to control a read retry operation for the plurality of memory cells using the read retry table, the read retry table being determined using internal data and external data,
- wherein the internal data is determined based on read voltages of M number of word lines among the plurality of word lines, M being greater than or equal to 1, and
- wherein the external data is determined based on read voltages of at least N number of word lines included in each of a plurality of external memories, N being greater than M.
2 more elements
A storage device comprising:
- a first memory including a plurality of first word lines, and a block in which a first read retry table is determined based on read voltages of M number of first word lines among the plurality of first word lines which are stored, M being greater than or equal to 1;
- and
- a second memory including a plurality of second word lines, and a block in which a second read retry table is determined based on read voltages of at least N number of second word lines among the plurality of second word lines which are stored, N being greater than M.
A memory control device comprising:
- a sample data reception unit configured to receive, from a memory or the outside, sample data for read voltages of K number of word lines, K being greater than or equal to 1;
- and
- an optimal read retry table generator configured to generate a read retry table for the memory including the K number of word lines on the basis of the sample data,
- wherein, when K is less than a preset number, the optimal read retry table generator generates the read retry table by comparing the sample data for the read voltages of the K number of word lines with read voltages of word lines, a number of which is greater than or equal to the preset number, or
- by comparing the sample data for read voltages of the K number of word lines with the read retry table generated based on read voltages of word lines, a number of which is greater than or equal to the preset number.
2 more elements
Dependencies are inferred from the claim text.