Complementary metal-oxide-semiconductor (CMOS) voltage reference generator
AssigneeMacronix International Co., Ltd.
InventorHsien-Hung Wu
Life of this patent
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AssigneeMacronix International Co., Ltd.
InventorHsien-Hung Wu
Estimating the term…
A voltage generation circuit for high performance and high capacity three-dimensional (3D) NAND memory that receives an input control current and outputs a VREF is provided. The voltage generation circuit includes a first circuit including first and second transistors connected in series between a first node receiving the input control current and a supply node, a second circuit including first and second resistors connected in series between the first node and the supply node, wherein the input control current is divided between the first and second circuits, reference node outputs VREF and is connected to the first transistor, a second node located between the first resistor and the second resistor and in electrical communication with the second transistor, and a current supply circuit connected to the second node and providing a compensation current that influences VREF to account for changes in operating temperatures.
A voltage generation circuit that receives an input control current and outputs a reference voltage (VREF), the voltage generation circuit comprising:
A voltage generation circuit that receives an input control current and outputs a reference voltage (VREF), the voltage generation circuit comprising:
A voltage generation circuit that receives an input control current and outputs a reference voltage (VREF), the voltage generation circuit comprising:
Dependencies are inferred from the claim text.