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US 12,607,941 B2Granted
Semiconductor structure and method for forming the same
AssigneeWinbond Electronics Corp.
InventorYen-Chiao Chen
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes vertical conductive features disposed over a substrate, and horizontal conductive features disposed over the vertical conductive features. The horizontal conductive features include first and second conductive lines respectively electrically connected to the first and second vertical conductive features, a first conductive segment disposed between the first vertical conductive feature and the second conductive line, and a second conductive segment disposed between the first conductive line and the second vertical conductive feature. The first conductive segment is electrically isolated from the vertical conductive features. The second conductive segment is electrically isolated from the vertical conductive features.
Claims16
A semiconductor structure, comprising:
- vertical conductive features disposed over a substrate and extending in a vertical direction perpendicular to a main surface of the substrate;
- and
- horizontal conductive features disposed over the vertical conductive features and extending in a first direction parallel to the main surface of the substrate, wherein the horizontal conductive features comprise:
- a first conductive line and a second conductive line respectively electrically connected to a first vertical conductive feature and a second vertical conductive feature of the vertical conductive features;
- a first conductive segment disposed between the first vertical conductive feature and the second conductive line in a second direction, wherein the first conductive segment is electrically isolated from the vertical conductive features, the second direction is parallel to the main surface of the substrate and perpendicular to the first direction;
- and
- a second conductive segment disposed between the first conductive line and the second vertical conductive feature in the second direction, wherein the second conductive segment is electrically isolated from the vertical conductive features,
- wherein no horizontal conductive feature is disposed between the second conductive segment and the first conductive line in the second direction.
5 more elements
A semiconductor structure, comprising:
- conductive plugs disposed over a substrate;
- and
- a first conductive line, a second conductive line, a first conductive segment and a second conductive segment disposed over the conductive plugs and extending in a first direction, wherein:
- the first conductive segment and the second conductive segment are disposed between the first conductive line and the second conductive line,
- the first conductive line is electrically connected to a first contact plug of the conductive plugs, and the second conductive line is electrically connected to a second contact plug of the conductive plugs, p2 a projection area of the first conductive segment projected onto the first conductive line in a second direction covers the first contact plug, and the second direction is perpendicular to the first direction, and
- a projection area of the second conductive segment projected onto the second conductive line in a third direction covers the second contact plug, and the third direction is perpendicular to the first direction and opposite to the second direction,
- wherein the projection area of the first conductive segment and the projection area of the second conductive segment are offset from each other in the second direction or the third direction,
- wherein the second conductive line is electrically connected to a third contact plug of the contact plugs, and a projection area of the first conductive segment projected onto the second conductive line in the third direction covers the third contact plug.
5 more elements
A method for forming a semiconductor structure, comprising:
- forming contact plugs over a substrate;
- forming a dielectric layer over the contact plugs;
- etching the dielectric layer using a first patterned mask layer to form a first trench and a second trench;
- etching the dielectric layer using a second patterned mask layer to form a third trench and a fourth trench;
- and
- depositing a metal material to form a first conductive segment in the first trench, a second conductive segment in the second trench, a first conductive line in the third trench, and a second conductive line in the fourth trench, wherein the first conductive segment is electrically isolated from the contact plugs, the second conductive segment is electrically isolated from the contact plugs, and the first conductive line and the second conductive line are electrically connected to a first contact plug and a second contact plug of the contact plugs, respectively,
- wherein the first conductive segment projected onto the first conductive line in a second direction covers the first contact plug, and the second direction is perpendicular to the first direction,
- wherein a projection area of the second conductive segment projected onto the second conductive line in a third direction covers the second contact plug, and the third direction is perpendicular to the first direction and opposite to the second direction,
- wherein the second conductive line is electrically connected to a third contact plug of the contact plugs, and a projection area of the first conductive segment projected onto the second conductive line in the third direction covers the third contact plug.
6 more elements
Dependencies are inferred from the claim text.