Reticle masking device, substrate processing apparatus including the same, and substrate processing method using the same

A substrate processing apparatus, comprising:

• an extreme ultraviolet (EUV) source;
• a reticle stage configured to support a reticle;
• a substrate stage configured to support a substrate;
• and
• a reticle masking device between the EUV source and the reticle stage,
• wherein the reticle masking device includes:
• a first masking device including a mask hole;
• a second masking device between the first masking device and the reticle stage and including a slit overlapping the mask hole, the second masking device being movable in a first direction as a horizontal direction;
• and
• an optical sensor device on a bottom surface of the second masking device, fixedly coupled to the second masking device, and movable in the first direction together with the second masking device,
• wherein the bottom surface of the second masking device faces the first masking device and
• wherein the optical sensor device includes a first sensor on one side of the slit.

A substrate processing method, comprising:

• placing a substrate in a substrate processing apparatus;
• irradiating an extreme ultraviolet (EUV) radiation to the substrate;
• and
• measuring the EUV radiation,
• wherein the substrate processing apparatus includes:
• an EUV source;
• a reticle stage that supports a reticle;
• a substrate stage that supports the substrate;
• and
• a reticle masking device between the EUV source and the reticle stage,
• wherein the reticle masking device includes a first masking device, a second masking device between the first masking device and the reticle stage and an optical sensor device that is fixedly coupled to a bottom surface of the second masking device and movable in a first direction as a horizontal direction,
• wherein the bottom surface of the second masking device faces the first masking device,
• wherein the optical sensor device includes a first sensor, and
• wherein the measuring the EUV radiation includes:
• allowing the reticle to receive the EUV radiation generated from the EUV source;
• allowing the first sensor to measure the EUV radiation irradiated to the reticle;
• and
• driving the first sensor to move in the first direction.