Patterning material and patterned film
AssigneeHuawei Technologies Co., Ltd.
InventorsYu Zhang, Zhixiong Zeng, Huihui Zhou
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Abstract
Example patterning materials and pattern films are described. One example patterning material includes polysiloxane. The polysiloxane includes at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and an organic group connected to a Si atom in the at least one cyclic structure. A subset of Si atoms in the at least one cyclic structure are substituted by a metal element, and/or at least one organic group includes a halogen element.
Claims20
A patterning material, comprising polysiloxane, wherein the polysiloxane comprises at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and at least one organic group connected to a silicon (Si) atom in the at least one cyclic structure, the at least one organic group is represented by the following formula:
A patterned film, wherein the patterned film is formed using a patterning material, wherein the patterning material comprises polysiloxane, wherein the polysiloxane comprises at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and at least one organic group connected to a silicon (Si) atom in the at least one cyclic structure, and wherein at least one of the following is satisfied:
- a subset of Si atoms in the at least one cyclic structure are substituted by a metal element;
- and
- the at least one organic group comprises a halogen element, and
- wherein the patterning material is patterned to form the patterned film by exposing the patterning material to an X-ray light through a photomask.
A method of forming a patterned film formed on a substrate, the method comprising:
- forming a coating layer over a silicon wafer;
- applying a patterning material onto the coating layer by a spin coating process to form a patterning material film layer having a thickness;
- baking the patterning material film layer;
- exposing the patterning material film layer to an X-ray light with a wavelength of 1 nm to 15 nm through a photomask at an exposure energy of less than 100 mJ/cm2;
- baking the patterning material film layer after the exposing;
- and
- developing the patterning material film layer using a developer to form the patterned film,
- wherein the patterning material comprising polysiloxane,
- wherein the polysiloxane comprises at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and at least one organic group connected to a silicon (Si) atom in the at least one cyclic structure, and
- wherein a subset of Si atoms in the at least one cyclic structure are substituted by a metal element.
Dependencies are inferred from the claim text.