US 12,607,929 B2 · Photoresist and formation method thereof

Abstract

A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 Formula (A1); or Hf6O4(OH)6(RCO2)10 Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Claims20

Dependent claims

A method of manufacturing a semiconductor device, comprising:

forming a photoresist layer over a material layer on a substrate, wherein the photoresist layer has a composition comprising:
a solvent;
and
a first photo-active compound dissolved in the solvent, the first photo-active compound is represented by the following formula (A1) or formula (A2):
Zr12O8(OH)14(RCO2)18 Formula (A1);
or
Hf6O4(OH)6(RCO2)10 Formula (A2),
and R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6):
wherein an OH group and a CO2 group of the Formula (A1) have a ratio of 14:18, an OH group and a CO2 group of the Formula (A2) have a ratio of 6:10;
patterning the photoresist layer;
and
etching the material layer using the photoresist layer as an etch mask.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/314,566Filed 9 May 2023 · us provisional application

Priority

29 Aug 2022

Published

US 2024/0111210 A14 Apr 2024

Granted

21 Apr 2026

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

G03F 7/0043
With inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists: chalcogenides; Silicon, germanium,…
G03F 7/0042
Photosensitive materials: with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
G03F 7/027
Photosensitive materials: non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
H10P 76/2041
Of organic photoresist masks: photolithographic processes

Photoresist and formation method thereof

Life of this patent

Photoresist and formation method thereof

Life of this patent

Abstract

Claims20