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US 12,607,924 B2Granted
Hardmask structure for preparing semiconductor structure
AssigneeNanya Technology Corporation
InventorWei-Chuan Fang
Life of this patent
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Abstract
The present disclosure provides a hardmask structure for preparing a semiconductor structure. The hardmask structure includes a first ashable hardmask layer, a first anti-reflection coating, and a second ashable hardmask layer. The first anti-reflection coating is disposed on the first ashable hardmask layer. The second ashable hardmask layer is disposed on the first anti-reflection coating. A modulus of the first ashable hardmask layer is greater than a modulus of the second ashable hardmask layer.
Claims10
A hardmask structure, comprising:
- a first ashable hardmask layer;
- a first anti-reflection coating disposed on the first ashable hardmask layer;
- and
- a second ashable hardmask layer disposed on the first anti-reflection coating, wherein the first ashable hardmask layer and the second ashable hardmask layer comprise a same type dopant, and wherein the first anti-reflection coating disposed between the first ashable hardmask layer and the second ashable hardmask layer, a modulus of the first ashable hardmask layer disposed below the first anti-reflection coating is greater than a modulus of the second ashable hardmask layer disposed over the first anti-reflection coating.
1 more element
Dependencies are inferred from the claim text.