Imaging lens, camera module and electronic device

An imaging lens, having a central optical path and comprising:

• a plurality of lens elements, sequentially arranged along the central optical path, wherein the plurality of lens elements comprise a first lens element and at least one subsequent lens element, and the first lens element is located closer to an object side than the at least one subsequent lens element;
• a wide-range low reflection layer, disposed on an object-side surface of the first lens element, wherein an average reflectance of the wide-range low reflection layer to light with a wavelength ranging from 750 to 1050 nanometers is less than or equal to 0.98%;
• and
• an infrared light reduction layer, located closer to an image side than the wide-range low reflection layer, wherein an average reflectance of the infrared light reduction layer to light with the wavelength ranging from 750 to 1050 nanometers is greater than or equal to 50%;
• wherein the central optical path passes through a paraxial region of the first lens element, a thickness of the first lens element along the central optical path is T, a distance along the central optical path between the wide-range low reflection layer and the infrared light reduction layer is D, and the following condition is satisfied:
• 0
• .
• 1
• ⁢
• 1
• ≤
• T
• /
• D
• ≤
• 1
• .
• 0
• .

An imaging lens, having a central optical path and comprising:

• a plurality of lens elements, sequentially arranged along the central optical path, wherein the plurality of lens elements comprise a first lens element and at least one subsequent lens element, and the first lens element is located closer to an object side than the at least one subsequent lens element;
• a wide-range low reflection layer, disposed on an object-side surface of the first lens element, wherein an average reflectance of the wide-range low reflection layer to light with a wavelength ranging from 750 to 1050 nanometers is less than or equal to 0.98%;
• and
• an infrared light reduction layer, located closer to an image side than the wide-range low reflection layer, wherein an average reflectance of the infrared light reduction layer to light with the wavelength ranging from 750 to 1050 nanometers is greater than or equal to 50%;
• wherein a curvature radius of the wide-range low reflection layer in a region where the central optical path passes is R1, a curvature radius of the infrared light reduction layer in a region where the central optical path passes is R2, and the following condition is satisfied:
• 0
• ≤
• R
• ⁢
• 1
• /
• R
• ⁢
• 2
• ≤
• 1
• .
• 4
• ⁢
• 8
• .