Shower head, substrate processing apparatus, and substrate processing method

A substrate processing apparatus comprising:

• a processing chamber configured to perform a process on a substrate;
• a gas supply configured to supply a plurality of kinds of gases to the processing chamber;
• and
• a shower head connected to the gas supply and configured to discharge each of the plurality of kinds of gases into the processing chamber,
• wherein the shower head includes:
• a structure;
• a first diffusion chamber, spreading inside the structure in a direction perpendicular to a thickness direction of the structure, configured to diffuse a first gas;
• a second diffusion chamber, provided inside the structure adjacent to the first diffusion chamber in the thickness direction and independent of the first diffusion chamber, configured to diffuse a second gas;
• a plurality of cylinders disposed in the first diffusion chamber and having communication holes on inner sides thereof communicating with the second diffusion chamber;
• a plurality of first discharge ports, provided in a discharge surface of the structure and communicating with the first diffusion chamber, and configured to discharge the first gas;
• a plurality of second discharge ports, provided in the discharge surface at positions different from the first discharge ports and communicating with the communication holes of the plurality of cylinders, and configured to discharge the second gas;
• a central supply chamber, provided separately from the first diffusion chamber and the second diffusion chamber at a central portion of the structure in the direction perpendicular to the thickness direction, and configured to supply a radicalized third gas;
• and
• one or more third discharge ports, provided in a central portion of the discharge surface and communicating with the central supply chamber, and configured to discharge the third gas, wherein:
• the structure has the central supply chamber disposed at a position adjacent to the second diffusion chamber, and a partition wall partitioning the central supply chamber from the second diffusion chamber, and
• the partition wall includes one or more horizontal holes communicating the second diffusion chamber with the central supply chamber.

A substrate processing method for a substrate processing apparatus including a processing chamber configured to perform a process on a substrate, a gas supply configured to supply a plurality of kinds of gases to the processing chamber, and a shower head connected to the gas supply and configured to discharge each of the plurality of kinds of gases into the processing chamber, the substrate processing method comprising:

• diffusing a first gas in a first diffusion chamber provided in a structure of the shower head and spreading in a direction perpendicular to a thickness direction of the structure, and discharging the first gas from a plurality of first discharge ports provided in a discharge surface of the structure and communicating with the first diffusion chamber;
• diffusing a second gas in a second diffusion chamber provided adjacent to the first diffusion chamber in the thickness direction of the structure and independent of the first diffusion chamber, and discharging the second gas from a plurality of second discharge ports provided in the discharge surface at positions different from the first discharge ports and communicating with communication holes of a plurality of cylinders disposed in the first diffusion chamber;
• and
• discharging a radicalized third gas from one or more third discharge ports provided in a central portion of the discharge surface and communicating with a central supply chamber provided separately from the first diffusion chamber and the second diffusion chamber in a central portion of the structure in the direction perpendicular to the thickness direction,
• wherein during the diffusing of the second gas in the second diffusion chamber, the second gas diffuses through horizontal holes into the central supply chamber and into the third discharge ports, and during the discharging the radicalized third gas, the radicalized third gas does not flow into the second diffusion chamber.