Substrate processing system and method of manufacturing semiconductor device using the same

A substrate processing system comprising:

• a process chamber;
• and
• a scrubber connected to the process chamber and configured to treat at least one from among exhaust gases discharged from the process chamber as a part of a semiconductor process on a substrate, the scrubber comprising:
• a first oxygen supply unit that comprises a first gas containing oxygen (O2);
• a first chamber connected to the first oxygen supply unit and the process chamber, and configured to receive the first gas containing the oxygen from the first oxygen supply unit, receive the exhaust gases discharged from the process chamber, and obtain a first treatment gas by oxidizing at least some of the exhaust gases using the oxygen supplied from the first oxygen supply unit;
• a second chamber connected to the first chamber, and configured to receive the first treatment gas from the first chamber, and obtain a second treatment gas by burning the first treatment gas;
• a third chamber connected to the second chamber, and configured to receive the second treatment gas from the second chamber, and perform a wetting treatment of the second treatment gas;
• and
• a tank disposed below the first chamber, the second chamber, and the third chamber, and connected to each of the first chamber, the second chamber, and the third chamber.