Method and apparatus with high conductance components for chamber cleaning
AssigneeApplied Materials, Inc.
InventorsRick Kustra, Kaushik Comandoor Alayavalli, Jay D. Pinson, II, Sathya Swaroop Ganta, Anup Kumar Singh
Life of this patent
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Abstract
Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.
Claims17
A process chamber suitable for processing semiconductor substrates, comprising:
- a lid;
- a chamber body coupled to the lid, wherein the chamber body and lid define a process volume;
- a substrate support disposed and movable within the process volume, the substrate support comprising:
- an edge ring;
- and
- an insulator ring, the insulator ring defining an outer edge of the substrate support, the insulator ring separating the edge ring from the outer edge of the substrate support;
- and
- a coupling ring disposed within the chamber body and located between the lid and the substrate support, wherein the coupling ring is coupled to a radio frequency (RF) power source, wherein the coupling ring has a single central opening and an inner diameter extending into the process volume, and the coupling ring extends at least partially over a portion of the edge ring of the substrate support.
A process chamber suitable for processing semiconductor substrates, comprising:
- a lid;
- a chamber body comprising a chamber sidewall, wherein the lid and chamber sidewall defines a process volume;
- a substrate support comprising cathode assembly disposed and movable within a process volume, the cathode assembly comprising an edge ring and an insulator, wherein an outer diameter of the edge ring is substantially equal to an outer diameter of the cathode assembly, wherein the outer diameter of the edge ring and the chamber sidewall form a gap, wherein the gap is about 400 mil to about 600 mil;
- and
- a coupling ring disposed within the chamber body and located between the lid and the substrate support, wherein the coupling ring is coupled to ground or is coupled to a radio frequency (RF) power source, wherein the coupling ring has a central opening and an inner diameter extending into the process volume such that the coupling ring overlaps the edge ring.
Dependencies are inferred from the claim text.