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US 12,606,718 B2Granted
Polishing composition, polishing method, and method of manufacturing semiconductor substrate
AssigneeFujimi Incorporated
InventorsRyota Mae, Akane Kumayama, Masaki Tada
Life of this patent
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Abstract
Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.
Claims18
A polishing composition comprising zirconia particles and a dispersing medium, wherein:
- the zirconia particles are composed of tetragonal zirconia and cubic zirconia;
- a content ratio (mass ratio) of the tetragonal zirconia to the cubic zirconia in the zirconia particles is 0.5:9.5 or more and 9.5:0.5 or less;
- an average secondary particle size of the zirconia particles is less than 50 nm;
- an average primary particle size of the zirconia particles is 20 nm or less;
- and
- a pH of the polishing composition is less than 7.
3 more elements
A polishing composition comprising zirconia particles and a dispersing medium, wherein;
- the zirconia particles comprise at least one of tetragonal zirconia and cubic zirconia, and the zirconia particles further comprise monoclinic zirconia;
- a content ratio (mass ratio) of the tetragonal zirconia and the cubic zirconia to the monoclinic zirconia in the zirconia particles is 0.5:9.5 or more and 9.5:0.5 or less;
- an average secondary particle size of the zirconia particles is less than 50 nm;
- an average primary particle size of the zirconia particles is 20 nm or less;
- and
- a pH of the polishing composition is less than 7.
3 more elements
Dependencies are inferred from the claim text.