Halogen-free molybdenum-containing precursors for deposition of molybdenum
AssigneeApplied Materials, Inc.
InventorsFeng Q. Liu, Mark J. Saly, David Thompson
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Abstract
Exemplary methods of semiconductor processing, such as methods of depositing a molybdenum-containing material on a substrate, may include providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber in which the substrate is located. The molybdenum-containing precursor may include a molybdenum complex according to Compound I: R may be methyl or ethyl, R′ may be methyl or ethyl, R″ may be methyl, ethyl, or propyl, and n may be equal to 1 or 2. Contacting the substrate with the molybdenum-containing precursor may deposit the molybdenum-containing material on the substrate.
Claims20
A molybdenum complex comprising Compound I:
- wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is hydrogen, methyl, ethyl, or propyl, and n equals 1 or 2.
A method of depositing a film, the method comprising:
- i) providing a molybdenum-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate is disposed within the processing region of the semiconductor processing chamber, and wherein the molybdenum-containing precursor comprises a molybdenum complex according to Compound I:
- wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is methyl, ethyl, or propyl, and n=1 or 2;
- and
- ii) contacting the substrate with the molybdenum-containing precursor, wherein the contacting deposits a molybdenum-containing material on the substrate.
A method of forming a molybdenum complex, the method comprising:
- reacting Y—O—CH(R″)—(CH2)n—NR(R′) where Y is an alkali metal and MoO2X2 where X is a halogen in a dry, organic solvent to produce the molybdenum complex according to Compound I:
- wherein R is methyl or ethyl, R′ is methyl or ethyl, R″ is methyl, ethyl, or propyl, and n=1 or 2.
Dependencies are inferred from the claim text.