Composite material sintered body, joined assembly, semiconductor manufacturing apparatus member, and composite material sintered body manufacturing method

A joined assembly of a first member and a second member,

• the first member composed of a composite material sintered body,
• the second member composed of aluminum nitride, and
• the composite material sintered body
• comprising silicon carbide, tungsten silicide, and tungsten carbide,
• containing 14.4 wt % or more and 48.6 wt % or less of silicon carbide, and
• having an open porosity of 1% or less.

A semiconductor manufacturing apparatus member comprising

• a joined assembly of a first member and a second member, wherein
• the first member is a cooling member to cool the second member and comprises a composite material sintered body,
• the second member comprises aluminum nitride, and
• the composite material sintered body
• comprises silicon carbide, tungsten silicide, and tungsten carbide,
• contains 14.4 wt % or more and 48.6 wt % or less of silicon carbide, and
• has an open porosity of 1% or less.

A composite material sintered body manufacturing method comprising:

• a) mixing SiC powder, WSi2 powder, and WC powder or W powder to obtain a powder mixture;
• b) forming the powder mixture into a predetermined shape to obtain a formed body;
• and
• c) subjecting the formed body to hot press firing under an inert atmosphere, wherein
• in the step a), 5.7 wt % to 27.7 wt % of SiC powder, 12.5 wt % to 55.3 wt % of WSi2 powder, and 49.5 wt % to 81.3 wt % of WC powder or 17.0 wt % to 55.7 wt % of W powder are mixed so that a total weight percentage is 100 wt %, and
• in the step c), a maximum temperature is 1700° C. to 1850° C., and a press pressure is 225 kgf/cm2 to 300 kgf/cm2.