Semiconductor device with transducer and method for forming the same

A semiconductor device, comprising:

• a first semiconductor component, comprising:
• a substrate;
• a first transistor, formed on the substrate;
• a second transistor, formed on the substrate and separated from the first transistor;
• a first insulating layer formed on the substrate and a second insulating layer formed on the first insulating layer, wherein a plurality of first metal structures embedded within the second insulating layer, and a drain structure and a source structure of the first transistor are electrically connected to a portion of the first metal structures;
• a bonding layer, provided on the first semiconductor component;
• and
• a second semiconductor component, provided on the bonding layer, comprising:
• an acoustic transducer, controlled by the first transistor and the second transistor to execute a photoacoustic sensing, wherein the acoustic transducer comprises a space gap, and a least a portion of the space gap is surrounded by the bonding layer.