# US 12,604,780 B2 · Radio frequency module and communication device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,780 B2 - Document ID: US12604780B2 - Status: Granted - Kind: B2 - Application number: 18/323,654 - Filed: 2023-05-25 - Published: 2023-09-21 - Granted: 2026-04-14 - Earliest claimed: 2020-12-11 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Yukiya Yamaguchi; Takanori Uejima; Motoji Tsuda; Yuji Takematsu; Shunji Yoshimi; Satoshi Arayashiki; Mitsunori Samata; Satoshi Goto; Masayuki Aoike - Web page: https://patentgrep.com/patent/US12604780B2 ## CPC - H04B 1/44: Transmit/receive switching - H10W 90/00: Package configurations - H10W 42/276: {the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation} - H04B 1/005: {adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges} - H04B 1/0458: {Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages (matching circuits in general H03H)} - H04B 1/18: Input circuits, e.g. for coupling to an antenna or a transmission line (coupling networks between antennas or lines and receivers independent of the nature of the receiver H03H) - H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons - H10W 70/611: {for connecting multiple chips together} - H10W 70/635: {Through-vias} - H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core} - H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/732: {between stacked chips} - H04B: TRANSMISSION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A radio frequency module includes a module substrate having major surfaces that face each other, a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed, a second base part that is at least partially comprised of a second semiconductor material different from the first semiconductor material and in which a power amplifier is formed, and a switch connected to an output terminal of the power amplifier. The first base part is disposed on or over the major surface; the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode; and the switch is disposed on or over the major surface. ## Claims ### Claim 1 A radio frequency module comprising: a module substrate having a first major surface and a second major surface that face each other; a first base that at least partially comprises a first semiconductor material, and in which an electronic circuit is formed; a second base that at least partially comprises a second semiconductor material different from the first semiconductor material, and in which a power amplifier is formed; and a first switch connected to an input terminal or an output terminal of the power amplifier, wherein the first base is on or over the first major surface; the second base is between the module substrate and the first base, is joined to the first base, and is connected to the first major surface via a first electrode; and the first switch is on or over the second major surface. ### Claim 2 (depends on 1) The radio frequency module according to claim 1, wherein the first semiconductor material is silicon or gallium nitride, wherein the second semiconductor material is gallium arsenide or silicon germanium, and wherein the first base and the second base are on or over the first major surface. ### Claim 3 (depends on 1) The radio frequency module according to claim 1, wherein in a plan view of the module substrate, the first base or the second base at least partially overlaps the first switch. ### Claim 4 (depends on 1) The radio frequency module according to claim 1, further comprising: a first transmission filter with a pass band that comprises at least a part of a transmission band of a first communication band; and a second transmission filter with a pass band that comprises at least a part of a transmission band of a second communication band, wherein the first switch is connected between the output terminal and each of the first transmission filter and the second transmission filter, and is configured to switch connection of the output terminal between the first transmission filter and the second transmission filter. ### Claim 5 (depends on 1) The radio frequency module according to claim 1, wherein the first switch is connected to the input terminal, and is configured to selectively connect and disconnect a transmission input terminal to and from the input terminal, a transmission signal being input to the input terminal. ### Claim 6 (depends on 1) The radio frequency module according to claim 1, wherein a thermal conductivity of the first semiconductor material is greater than a thermal conductivity of the second semiconductor material. ### Claim 7 (depends on 1) The radio frequency module according to claim 1, wherein the first base is connected to the first major surface via a second electrode. ### Claim 8 (depends on 1) The radio frequency module according to claim 1, wherein the power amplifier comprises an amplification transistor comprising a collector layer, a base layer, and an emitter layer; and the collector layer, the base layer, and the emitter layer are stacked, the base layer being between the collector layer and the emitter layer, and the collector layer being closer to the first base than the base layer and the emitter layer. ### Claim 9 (depends on 1) The radio frequency module according to claim 1, wherein the electronic circuit comprises a control circuit configured to control the power amplifier. ### Claim 10 (depends on 1) The radio frequency module according to claim 1, further comprising: multiple external connection terminals that are on the second major surface. ### Claim 11 (depends on 10) The radio frequency module according to claim 10, further comprising: a via conductor that is in the module substrate and that connects the first major surface to the second major surface, wherein a first end of the via conductor is connected to a ground electrode of the power amplifier at the first major surface, and wherein a second end of the via conductor is connected to one of the multiple external connection terminals at the second major surface, the one of the multiple external connection terminals being at a ground potential. ### Claim 12 (depends on 10) The radio frequency module according to claim 10, wherein the first switch is in a semiconductor integrated circuit (IC). ### Claim 13 (depends on 10) The radio frequency module according to claim 10, further comprising: a low-noise amplifier on or over the second major surface, wherein in a plan view of the module substrate, the first base and the second base do not overlap the low-noise amplifier. ### Claim 14 (depends on 13) The radio frequency module according to claim 13, further comprising: a first impedance matching circuit that is connected to the output terminal and that is on or over the second major surface; and a second impedance matching circuit that is connected to an input terminal of the low-noise amplifier and that is on or over the first major surface. ### Claim 15 (depends on 1) The radio frequency module according to claim 1, further comprising: multiple external connection terminals on the first major surface. ### Claim 16 (depends on 15) The radio frequency module according to claim 15, further comprising: a low-noise amplifier on or over the first major surface, wherein in a plan view of the module substrate, a ground terminal is on the first major surface between each of the first base and the second base and the low-noise amplifier. ### Claim 17 (depends on 1) A communication device comprising: a radio frequency (RF) signal processing circuit that is configured to process a radio frequency signal transmitted via an antenna; and the radio frequency module according to claim 1 that is configured to transmit the radio frequency signal between the antenna and the RF signal processing circuit.