# US 12,604,756 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,756 B2 - Document ID: US12604756B2 - Status: Granted - Kind: B2 - Application number: 18/255,382 - Filed: 2021-12-02 - Published: 2024-01-25 - Granted: 2026-04-14 - Earliest claimed: 2020-12-04 - Applicants: Resonac Corporation - Inventors: Hiroaki Matsubara; Daisuke Ikeda; Keisuke Okawara; Shogo Sobue; Saeko Ogawa - Web page: https://patentgrep.com/patent/US12604756B2 ## CPC - H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)} - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes} - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 74/014: {using batch processing} - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10P 72/7416: {used during dicing or grinding} - H10P 72/7424: {used as a support during the manufacture of self-supporting substrates} - H10W 72/0198: {batch processes} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements each including a first surface on which a connection terminal is formed and a second surface on a side opposite to the first surface, preparing a support member in which a curable bonding adhesive layer is formed on a carrier, attaching the plurality of semiconductor elements to the support member such that the second surface of each of the plurality of semiconductor elements is directed toward the curable bonding adhesive layer, fixing the plurality of semiconductor elements to the support member by curing the curable bonding adhesive layer, encapsulating the plurality of semiconductor elements with an encapsulant material, and removing the carrier. ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising: preparing a plurality of semiconductor elements each including a first surface on which a connection terminal is formed and a second surface on a side opposite to the first surface; preparing a curable bonding adhesive layer and a carrier, wherein the curable bonding adhesive layer is formed on the carrier; attaching the plurality of semiconductor elements to the curable bonding adhesive layer such that the second surface of each of the plurality of semiconductor elements is directed toward the curable bonding adhesive layer; fixing the plurality of semiconductor elements to the curable bonding adhesive layer by curing the curable bonding adhesive layer; encapsulating the plurality of semiconductor elements on the curable bonding adhesive layer with an encapsulant material after curing the curable bonding adhesive layer, so as to bond the encapsulant material to a surface of the cured curable bonding adhesive layer; and removing the carrier by irradiating with laser, wherein the carrier is removed from the cured curable bonding adhesive layer, wherein a bonding adhesive strength between the cured curable bonding adhesive layer and the encapsulant material is 4.0 MPa or more, wherein a bonding adhesive strength of the cured curable bonding adhesive layer to the carrier is 1 MPa or more in the encapsulating, and wherein a bonding adhesive strength of the cured curable bonding adhesive layer to the carrier is 5 MPa or less when the cured curable bonding adhesive layer is irradiated with the laser in the removing. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the bonding adhesive strength between the cured curable bonding adhesive layer and the encapsulant material is 8.0 MPa or less. ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the bonding adhesive strength between the cured curable bonding adhesive layer and the encapsulant material is 20 MPa or more. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a bonding adhesive strength between the cured curable bonding adhesive layer and the plurality of semiconductor elements is 4.0 MPa or more. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device in a state in which the cured curable bonding adhesive layer protects the second surface of each of the plurality of semiconductor elements is acquired. ### Claim 6 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the carrier is a glass substrate. ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the curable bonding adhesive layer includes a resin composition containing a thermoplastic resin and an epoxy curing agent, and a glass transition temperature of the thermoplastic resin is −40° C. or higher and 40° C. or lower. ### Claim 8 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein a thickness of the curable bonding adhesive layer is 1 μm or more and 400 μm or less after curing. ### Claim 9 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the carrier is a glass substrate or a transparent resin substrate, and a thickness thereof is 0.1 mm or more and 2.0 mm or less. ### Claim 10 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising: grinding an encapsulant material layer encapsulating the plurality of semiconductor elements in a state in which the plurality of semiconductor elements are fixed to the curable bonding adhesive layer. ### Claim 11 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising: forming a re-distribution layer on the first surface of the plurality of semiconductor elements in a state in which the plurality of semiconductor elements are fixed to the curable bonding adhesive layer. ### Claim 12 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising: attaching a solder ball to the connection terminal of the plurality of semiconductor elements or the re-distribution layer in a state in which the plurality of semiconductor elements are fixed to the curable bonding adhesive layer. ### Claim 13 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the carrier is a light transmissive substrate, and the curable bonding adhesive layer includes a light absorbing agent, and in the removing of the carrier, the carrier is removed by irradiating the cured curable bonding adhesive layer with laser light from the carrier side. ### Claim 14 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein in the removing of the carrier, the carrier is removed by applying laser light such that peeling energy for peeling off the carrier is 1 kW/cm2 or more and 200 kW/cm2 or less. ### Claim 15 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising: cleaning an exposed surface of either the cured curable bonding adhesive layer or the encapsulant material layer of the encapsulant material after the removing of the carrier. ### Claim 16 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising: singulating the plurality of semiconductor elements after the removing of the carrier. ### Claim 17 (depends on 16) The method for manufacturing a semiconductor device according to claim 16, wherein in the singulating of the plurality of semiconductor elements, the cured curable bonding adhesive layer is singulated together with the plurality of semiconductor elements, and wherein the semiconductor device is acquired from each of the plurality of semiconductor elements in which the second surface is protected by the cured curable bonding adhesive layer. ### Claim 18 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein, in the attaching of the plurality of semiconductor elements, a plurality of electronic components are attached to the curable bonding adhesive layer together with the plurality of semiconductor elements, and wherein, in the fixing of the plurality of semiconductor elements, the plurality of electronic components are fixed to the curable bonding adhesive layer by curing the curable bonding adhesive layer. ### Claim 19 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein, when the removing the carrier, the cured curable bonding adhesive layer contacts and covers: a surface of the encapsulant material which is opposite to the re-distribution layer, and the second surface of each of the plurality of semiconductor elements.