# US 12,604,745 B2 · Switching power device and parallel connection structure thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,745 B2 - Document ID: US12604745B2 - Status: Granted - Kind: B2 - Application number: 17/938,856 - Filed: 2022-10-07 - Published: 2023-02-02 - Granted: 2026-04-14 - Earliest claimed: 2021-07-06 - Assignees: Formitek Electric (Zhoushan) Co., Ltd. - Applicants: Formitek Electric (Zhoushan) Co., Ltd. - Inventors: Yue Fu; Lingtao Kong - Web page: https://patentgrep.com/patent/US12604745B2 ## CPC - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H10W 70/461: {specially adapted for cooling} - H10W 72/50: Bond wires - H10W 72/90: Bond pads, in general - H10W 90/811: {Multiple chips on leadframes} - H10W 44/206: {Wires} - H10W 70/65: Shapes or dispositions of interconnections - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements} - H10W 72/5475: {multiple bond wires connected to common bond pads at both ends of the wires} - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/926: {Multiple bond pads having different sizes} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A switching power device comprises a device lead-frame. Gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at the other end of the device lead-frame; and two gates and two Kelvin sources are provided. One end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure. ## Claims ### Claim 1 A switching power device, comprising: a device lead-frame, on which gates, Kelvin sources and a drain are formed; wherein the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at another end of the device lead-frame; wherein two gates and two Kelvin sources are provided, and one end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure; wherein the switching power device comprises a power semiconductor die arranged on the device lead-frame, wherein the power semiconductor die is provided with die gate wire-bonding pads, a die source wire-bonding pad and a die drain wire-bonding pad, and wherein the gates are connected to the die gate wire-bonding pads, the Kelvin sources are connected to the die source wire-bonding pad, and the drain is connected to the die drain wire-bonding pad; and wherein two die gate wire-bonding pads are provided, and each die gate wire-bonding pad is connected to one gate. ### Claim 2 (depends on 1) The switching power device according to claim 1, wherein each of the die gate wire-bonding pads has an area less than that of the die source wire-bonding pad and of the die drain wire-bonding pad. ### Claim 3 (depends on 1) The switching power device according to claim 1, wherein the device lead-frame is provided with a heat dissipation thermal pad, and the power semiconductor die is arranged on the heat dissipation thermal pad. ### Claim 4 (depends on 1) The switching power device according to claim 1, wherein a width of the die gate wire-bonding pads, a width of the die source wire-bonding pad and a width of the die drain wire-bonding pad are all 50-500 μm. ### Claim 5 (depends on 1) The switching power device according to claim 1, wherein the two die gate wire-bonding pads of the power semiconductor die are connected by a metal interconnection layer. ### Claim 6 (depends on 1) The switching power device according to claim 1, wherein the switching power device is a gallium nitride power device or a silicon power device, and the power semiconductor die is a gallium nitride power semiconductor die or a silicon power semiconductor die. ### Claim 7 (depends on 1) The switching power device according to claim 1, wherein the switching power device comprises a packaging structure, wherein the packaging structure is a surface-mounted packaging structure, an in-line packaging structure, or a flip-chip packaging structure. ### Claim 8 (depends on 7) The switching power device according to claim 7, wherein the packaging structure has a dimension of 5 mm×6 mm, 6 mm×8 mm or 8 mm×8 mm. ### Claim 9 A parallel connection structure of switching power devices, comprising: a driving IC chip and two of switching power devices; wherein each switching power device of the switching power devices, comprise a device lead-frame; wherein gates, Kelvin sources and a drain are formed on the device lead-frame, the gates and the Kelvin sources are arranged at one end of the device lead-frame, and the drain is arranged at another end of the device lead-frame; wherein two gates and two Kelvin sources are provided, and one end of the device lead-frame is sequentially provided with the gate, the Kelvin source, the Kelvin source and the gate, so as to form a symmetrical pin structure; wherein the two switching power devices are connected in parallel, and an output end of the driving IC chip is connected to gates and Kelvin sources of the switching power devices to form a driving circuit; wherein the switching power device comprises a power semiconductor die arranged on the device lead-frame, wherein the power semiconductor die is provided with die gate wire-bonding pads, a die source wire-bonding pad and a die drain wire-bonding pad, and wherein the gates are connected to the die gate wire-bonding pads, the Kelvin sources are connected to the die source wire-bonding pad, and the drain is connected to the die drain wire-bonding pad; and wherein two die gate wire-bonding pads are provided, and each die gate wire-bonding pad is connected to one gate. ### Claim 10 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein gates of the two switching power devices are connected by a gate driving wire, and the gate driving wire is connected to the output end of the driving IC chip, to form a gate driving circuit. ### Claim 11 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein each of the die gate wire-bonding pads has an area less than that of the die source wire-bonding pad and of the die drain wire-bonding pad. ### Claim 12 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein the device lead-frame is provided with a heat dissipation thermal pad, and the power semiconductor die is arranged on the heat dissipation thermal pad. ### Claim 13 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein a width of the die gate wire-bonding pads, a width of the die source wire-bonding pad and a width of the die drain wire-bonding pad are all 50-500 μm. ### Claim 14 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein the two die gate wire-bonding pads of the power semiconductor die are connected by a metal interconnection layer. ### Claim 15 (depends on 9) The parallel connection structure of switching power devices according to claim 9, wherein the switching power device is a gallium nitride power device or a silicon power device, and the power semiconductor die is a gallium nitride power semiconductor die or a silicon power semiconductor die. ### Claim 16 (depends on 15) The parallel connection structure of switching power devices according to claim 15, wherein the switching power device comprises a packaging structure, wherein the packaging structure is a surface-mounted packaging structure, an in-line packaging structure, or a flip-chip packaging structure.