# US 12,604,726 B2 · Electronic fuse

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- Number: US 12,604,726 B2
- Document ID: US12604726B2
- Status: Granted
- Kind: B2
- Application number: 17/879,145
- Filed: 2022-08-02
- Published: 2024-02-08
- Granted: 2026-04-14
- Earliest claimed: 2022-08-02
- Assignees: Globalfoundries Singapore Pte. Ltd.
- Applicants: GlobalFoundries Singapore Pte. Ltd.
- Inventors: Xinshu Cai; Shyue Seng Tan; Eng Huat Toh
- Web page: https://patentgrep.com/patent/US12604726B2

## CPC

- H10W 20/493: {Fuses, i.e. interconnections changeable from conductive to non-conductive}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure relates to semiconductor structures and, more particularly, to e-fuse structures and methods of manufacture. The structure includes: a silicided fuse structure which includes a narrow portion and wider, end portions; dummy structures on opposing sides of the silicided fuse structure; and sidewall spacer material separating the dummy structures from the silicided fuse structure.

## Claims

### Claim 1

A structure comprising:
a silicided fuse structure on an insulator material, the silicided fuse structure comprising, in a horizontal orientation with respect to an upper surface of an underlying insulator material, a width with a narrow middle portion and a width with wider, end portions;
polysilicon structures on opposing sides of the silicided fuse structure; and
sidewall spacer material separating the polysilicon structures from the silicided fuse structure; and
sidewall spacers on outer sidewalls of the polysilicon structures,
wherein the polysilicon structures have a wider portion corresponding to the narrow middle portion of the silicided fuse structure and a narrower portion corresponding to the wider, end portions, in a horizontal orientation.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the silicided fuse structure comprises polysilicon material bounded on both sides by the sidewall spacer material, and the polysilicon structures are along a length of the silicided fuse structure and do not have an electrical function.

### Claim 3 (depends on 2)

The structure of claim 2, wherein the sidewall spacer material comprises oxide material.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the sidewall spacers and the sidewall spacer material comprise a same material.

### Claim 5 (depends on 1)

The structure of claim 1, further comprising insulator material on a top surface of the polysilicon structures.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the silicided fuse structure is on a shallow trench isolation structure.

### Claim 7 (depends on 1)

The structure of claim 1, further comprising contacts on the wider, end portions.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the silicided fuse structure is provided on an oxidation of semiconductor material.

### Claim 9 (depends on 8)

The structure of claim 8, wherein the semiconductor material comprises an n-type implant.

### Claim 10 (depends on 1)

The structure of claim 1, wherein silicide completely covers a top surface of the silicided fuse structure and the sidewall spacer material lines a sidewall of the narrow middle portion, the wider, end portions and a junction between the narrow middle portion and the wider, end portions.

### Claim 11 (depends on 1)

The structure of claim 1, wherein the silicided fuse structure comprises monolithic polysilicon material, which has a silicide completely covering its upper surface and the polysilicon material comprises dummy gate structures.

### Claim 12

A structure comprising:
dummy gate structures comprising semiconductor material;
sidewall spacers on the dummy gate structures;
a polysilicon material between the dummy gate structures and contacting the sidewall spacers, the polysilicon material comprising, in a horizontal orientation, a narrow middle portion and wider, end portions; and
a silicide on the polysilicon material including on the narrow portion and the wider, end portions,
wherein the dummy gate structures comprise, in the horizontal orientation, a wider middle portion corresponding to the narrow middle portion of the polysilicon material and narrow end portions corresponding to the wider end portions of the polysilicon material.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the sidewall spacers comprise oxide material.

### Claim 14 (depends on 13)

The structure of claim 13, further comprising sidewall spacers on outer sidewalls of the dummy gate structures.

### Claim 15 (depends on 12)

The structure of claim 12, wherein the dummy gate structures comprise polysilicon material.

### Claim 16 (depends on 12)

The structure of claim 12, wherein the polysilicon material is on a shallow trench isolation structure.

### Claim 17 (depends on 12)

The structure of claim 12, wherein the polysilicon material is provided on an oxidation of semiconductor material.

### Claim 18 (depends on 17)

The structure of claim 17, wherein the semiconductor material comprises an n-type implant.

### Claim 19 (depends on 12)

The structure of claim 12, wherein the semiconductor material of the dummy gate structures comprises polysilicon material, the polysilicon material comprises a fuse structure of monolithic polysilicon material, and the silicide completely covers an upper surface of the fuse structure.