# US 12,604,713 B2 · Method of forming mask with reduced feature sizes

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- Number: US 12,604,713 B2
- Document ID: US12604713B2
- Status: Granted
- Kind: B2
- Application number: 18/511,023
- Filed: 2023-11-16
- Published: 2025-02-27
- Granted: 2026-04-14
- Earliest claimed: 2023-08-25
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Jung-Tzu Peng
- Web page: https://patentgrep.com/patent/US12604713B2

## CPC

- H10P 76/4085: {characterised by the processes involved to create the masks}
- G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction;
forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction;
forming a plurality of islands over the plurality of second mask layers;
forming an opening pattern definition layer on the plurality of islands to define a plurality of first openings;
removing the plurality of islands to form a plurality of second openings;
forming a cut pattern by removing the plurality of second mask layers overlapping the second openings and the first openings along a third direction orthogonal to the first direction and the second direction;
patterning the plurality of first mask layers by the cut pattern; and
patterning the substrate to define an active region;
wherein the opening pattern definition layer is formed by an atomic deposition layer process;
wherein forming the plurality of second mask layers comprises:
forming a dielectric layer over the plurality of first mask layers;
forming a photoresist pattern over the dielectric layer;
forming a pitch definition layer on the plurality of photoresist pattern; and
patterning the dielectric layer by removing the dielectric layer not overlapping the pitch definition layer along the third direction.

### Claim 2 (depends on 1)

The method of claim 1, wherein an angle defined by the first direction and the second direction ranges from about 20° to about 35°.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
forming a first aperture modification layer on the cut pattern to define a plurality of third openings overlapping the plurality of first mask layers along the third direction.

### Claim 4 (depends on 3)

The method of claim 3, wherein patterning the plurality of first mask layers comprises removing the plurality of first mask layers overlapping the plurality of third openings along the third direction.

### Claim 5 (depends on 3)

The method of claim 3, wherein the first aperture modification layer is formed by an atomic deposition layer process.

### Claim 6 (depends on 3)

The method of claim 3, wherein the first aperture modification layer comprises oxide, nitride, oxynitride, or a combination thereof.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
forming a second aperture modification layer on the opening pattern definition layer to modify dimensions of the plurality of first openings and the plurality of second openings.

### Claim 8 (depends on 1)

The method of claim 1, wherein the plurality of second openings and the plurality of first openings are alternatively arranged.

### Claim 9 (depends on 1)

The method of claim 1, wherein a pitch of the plurality of second openings is substantially equal to a pitch of the plurality of first openings.

### Claim 10 (depends on 1)

The method of claim 1, wherein a pitch of the plurality of second mask layers is defined by the pitch definition layer.