# US 12,604,712 B2 · Method of forming mask with reduced feature sizes

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- Number: US 12,604,712 B2
- Document ID: US12604712B2
- Status: Granted
- Kind: B2
- Application number: 18/238,015
- Filed: 2023-08-25
- Published: 2025-02-27
- Granted: 2026-04-14
- Earliest claimed: 2023-08-25
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: Jung-Tzu Peng
- Web page: https://patentgrep.com/patent/US12604712B2

## CPC

- H10P 76/4085: {characterised by the processes involved to create the masks}
- G03F 7/70466: {Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature (stitching G03F7/70475)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method of manufacturing a semiconductor device is provided. The method includes: providing a substrate; forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction; forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction; patterning the plurality of second mask layers to form a cut pattern; forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction; patterning the plurality of first mask layers to form an active region definition pattern; and patterning the substrate to define an active region by the active region definition pattern.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing a substrate;
forming a plurality of first mask layers over the substrate, wherein each of the first mask layers extends along a first direction;
forming a plurality of second mask layers over the substrate, wherein each of the second mask layers extends along a second direction different from the first direction;
patterning the plurality of second mask layers to form a cut pattern;
forming a first aperture modification layer on the cut pattern to define a plurality of first openings overlapping the plurality of first mask layers along a third direction substantially orthogonal to the first direction and the second direction;
patterning the plurality of first mask layers to form an active region definition pattern; and
patterning the substrate to define an active region by the active region definition pattern;
wherein forming the cut pattern comprises:
forming a plurality of islands over the plurality of second mask layers; and
forming an opening pattern definition layer on the plurality of islands to define a plurality of second openings;
removing the plurality of islands to form a plurality of third openings; and
forming the cut pattern by removing the plurality of second mask layers overlapping the plurality of second openings and the plurality of third openings along the third direction;
wherein the plurality of second openings and the plurality of third openings are alternatively arranged;
wherein forming the plurality of second mask layers comprises:
forming a dielectric layer over the plurality of first mask layers;
forming a photoresist pattern over the dielectric layer;
forming a pitch definition layer on the photoresist pattern; and
patterning the dielectric layer by removing the dielectric layer not overlapping the pitch definition layer along the third direction.

### Claim 2 (depends on 1)

The method of claim 1, wherein an angle defined by the first direction and the second direction ranges from about 20° to about 35°.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first aperture modification layer is formed by an atomic deposition layer process.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first aperture modification layer comprises oxide, nitride, oxynitride, or a combination thereof.

### Claim 5 (depends on 1)

The method of claim 1, wherein the opening pattern definition layer is formed by an atomic deposition layer process.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
forming a second aperture modification layer on the opening pattern definition layer to modify dimensions of the plurality of second openings and the plurality of third openings.

### Claim 7 (depends on 1)

The method of claim 1, wherein each of the plurality of first openings is smaller than each of the plurality of second openings.

### Claim 8 (depends on 1)

The method of claim 1, wherein a pitch of the plurality of second openings is substantially equal to a pitch of the plurality of third openings.

### Claim 9 (depends on 1)

The method of claim 1, wherein a pitch of the plurality of second mask layers is defined by the pitch definition layer.