Semiconductor processing equipment part and method for making the same

A production method of silicon carbide compounds comprising steps of:

• providing a hollow cathode unit;
• wherein the hollow cathode unit comprises two silicon targets placed parallel to each other within a case forming a slit therebetween defining a slit inlet and a slit outlet;
• applying a plasma power to the two silicon targets to ignite a hollow cathode discharge silicon plasma in a reduced-pressure environment;
• introducing a sputtering gas through the slit inlet to blow out the hollow cathode discharge silicon plasma, and introducing a hydro-carbon gas near the slit outlet;
• and the hydro-carbon gas is a non-ionized gas;
• and
• reacting the hollow cathode discharge silicon plasma with the hydro-carbon gas to form a silicon carbide compound film, wherein the protective coating layer has a gradient composition such that, near the substrate surface, a silicon atom concentration exceeds a carbon atom concentration, and near an outer surface of the coating, the carbon atom concentration exceeds the silicon atom concentration, and the silicon carbide compound film provides resistance to plasma etching;
• wherein the flow rate of the hydrocarbon gas is selectively adjusted such that the molar ratio of silicon to carbon in the resulting silicon carbide compound film is tunable.