Deposition equipment with adjustable temperature source
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih Yung Hung, Wei-Jen Lo, Cheng-Han Lee, Ching-Lun Lai, Chien-Feng Lin, Shahaji B. More, Shih-Chieh Chang
Life of this patent
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Abstract
The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.
Claims20
A method, comprising:
- providing a substrate onto a base station of an apparatus, the apparatus further including a first heating element fixed relative to the base station and a second heating element movable relative to the base station, the second heating element being operable to generate a columnated radiation;
- initiating rotation of the substrate;
- vertically moving the second heating element along a direction perpendicular to a top surface of the base station so to direct heating to a region of the substrate;
- initiating heating to the substrate from the first and second heating elements;
- and
- executing a deposition recipe under heating provided by the first heating element and by the second heating element.
A method, comprising:
- providing a substrate onto a base station of an apparatus, the apparatus further including heating lamps fixed relative to the base station and a laser heating element movable relative to the base station;
- initiating rotation of the substrate;
- heating the substrate by the heating lamps and the laser heating element;
- vertically moving the laser heating element along a direction perpendicular to a top surface of the base station;
- rotating the laser heating element;
- and
- performing a deposition process to the substrate while the heating of the substrate by the heating lamps and by the laser heating element.
A method, comprising:
- providing a substrate onto a base station of an apparatus, wherein the apparatus further includes heating lamps fixed relative to the base station and a laser heating element slidably attached to a slide fixed relative to the base station;
- initiating a rotation of the substrate;
- rotating the laser heating element such that a radiation beam from the laser heating element spans an angle θ from a vertical direction, wherein the angle θ is determined from a size S of the radiation beam on a plane perpendicular to a propagating direction of the radiation beam and a size S′ of the radiation beam on the substrate, according to an equation
- θ
- =
- cos
- -
- 1
- (
- (
- s
- ′
- s
- )
- 1
- 2
- )
- ;
- heating the substrate by the heating lamps and the laser heating element;
- and
- performing a deposition process to the substrate under the heating.
Dependencies are inferred from the claim text.