# US 12,604,610 B2 · Display panel and manufacturing method therefor, and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,610 B2 - Document ID: US12604610B2 - Status: Granted - Kind: B2 - Application number: 17/777,793 - Filed: 2021-01-13 - Published: 2022-12-29 - Granted: 2026-04-14 - Earliest claimed: 2020-02-27 - Assignees: Boe Technology Group Co., Ltd. - Applicants: BOE Technology Group Co., Ltd. - Inventors: Shantao Chen - Web page: https://patentgrep.com/patent/US12604610B2 ## CPC - H10K 59/1201: {Manufacture or treatment} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/173: comprising banks or shadow masks - H10K 59/80521: {characterised by their shape} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract Provided are a display panel and a manufacturing method therefor, and a display device. The display panel includes: a substrate, a pixel defining layer located on the substrate, and a cathode isolation structure located on the pixel defining layer. The cathode isolation structure includes at least a first isolation sub-layer and a second isolation sub-layer located between the pixel defining layer and the first isolation sub-layer, the cross section of the second isolation sub-layer is smaller than that of the first isolation sub-layer, and an orthographic projection, on the substrate, of the second isolation sub-layer falls within an orthographic projection range, on the substrate, of the first isolation sub-layer. ## Claims ### Claim 1 A display panel, comprising: a substrate; a pixel definition layer on a side of the substrate; a cathode isolation structure located on a side of the pixel definition layer away from the substrate, and the cathode isolation structure comprising: a first isolation sub-layer, and a second isolation sub-layer located between the pixel definition layer and the first isolation sub-layer, wherein a cross section of the second isolation sub-layer is smaller than a cross section of the first isolation sub-layer in a direction parallel to the substrate, and an orthographic projection of the second isolation sub-layer on the substrate falls within a range of an orthographic projection of the first isolation sub-layer on the substrate; wherein the cathode isolation structure further comprises: a third isolation sub-layer located between the pixel definition layer and the second isolation sub-layer; the cross section of the second isolation sub-layer is smaller than a cross section of the third isolation sub-layer in the direction parallel to the substrate, and the orthographic projection of the second isolation sub-layer on the substrate falls within a range of an orthographic projection of the third isolation sub-layer on the substrate; wherein a material of the first isolation sub-layer and a material of the third isolation sub-layer are inorganic materials, and a material of the second isolation sub-layer is an organic material; wherein the material of the first isolation sub-layer comprises silicon oxide, and the material of the third isolation sub-layer comprises silicon nitride. ### Claim 2 (depends on 1) The display panel according to claim 1, wherein a center of the cross section of the first isolation sub-layer, a center of the cross section of the second isolation sub-layer and a center of the cross section of the third isolation sub-layer that are stacked coincide in the direction parallel to the substrate. ### Claim 3 (depends on 1) The display panel according to claim 1, wherein the orthographic projection of the third isolation sub-layer on the substrate coincides with the orthographic projection of the first isolation sub-layer on the substrate. ### Claim 4 (depends on 1) The display panel according to claim 1, wherein a thickness of the first isolation sub-layer is not less than 200 nanometers. ### Claim 5 (depends on 1) The display panel according to claim 1, wherein materials of the first isolation sub-layer, the second isolation sub-layer and the third isolation sub-layer are different from each other. ### Claim 6 (depends on 1) The display panel according to claim 1, wherein the material of the second isolation sub-layer comprises polyimide. ### Claim 7 (depends on 1) The display panel according to claim 1, wherein the display panel further comprises: a cathode located on a side of the pixel definition layer and the cathode isolation structure away from the substrate; the cathode comprises: a first portion located on a side of the first isolation sub-layer facing away from the substrate, and a second portion located in a region outside the cathode isolation structure, wherein the first portion and the second portion are disconnected from each other. ### Claim 8 (depends on 7) The display panel according to claim 7, wherein the pixel definition layer comprises a plurality of pixel openings; the display panel further comprises: an anode located in the pixel openings; a light-emitting function layer located in the pixel openings and between the anode and the second portion of the cathode. ### Claim 9 (depends on 1) A manufacturing method for the display panel according to claim 1, comprising: forming the pixel definition layer on the substrate; forming the second isolation sub-layer on the pixel definition layer and forming the first isolation sub-layer on the second isolation sub-layer; wherein the cross section of the second isolation sub-layer is smaller than the cross section of the first isolation sub-layer in the direction parallel to the substrate, and the orthographic projection of the second isolation sub-layer on the substrate falls within the range of an orthographic projection of the first isolation sub-layer on the substrate. ### Claim 10 (depends on 9) The method according to claim 9, wherein before forming the second isolation sub-layer on the pixel definition layer, the method further comprises: forming a third isolation sub-layer on the pixel definition layer; wherein the cross section of the second isolation sub-layer is smaller than a cross section of the third isolation sub-layer in the direction parallel to the substrate, and the orthographic projection of the second isolation sub-layer on the substrate falls within a range of an orthographic projection of the third isolation sub-layer on the substrate. ### Claim 11 (depends on 10) The method according to claim 10, wherein forming the third isolation sub-layer, the second isolation sub-layer and the first isolation sub-layer on the pixel definition layer, comprises: forming a whole-layer third isolation sub-layer on the pixel definition layer; forming a whole-layer second isolation sub-layer on the third isolation sub-layer; forming a whole-layer first isolation sub-layer on the second isolation sub-layer; coating photoresist on the whole-layer first isolation sub-layer; forming a pattern of the photoresist by exposure and development processes; processing the first isolation sub-layer, the second isolation sub-layer and the third isolation sub-layer sequentially by an etching process so that the orthographic projection of the third isolation sub-layer on the substrate coincides with the orthographic projection of the first isolation sub-layer on the substrate, and over-etching a side surface of the second isolation sub-layer to form a pattern of the first isolation sub-layer, a pattern of the second isolation sub-layer and a pattern of the third isolation sub-layer; removing the photoresist. ### Claim 12 (depends on 9) The method according to claim 9, wherein after forming the first isolation sub-layer on the pixel definition layer, the method further comprises: forming a pattern of a cathode by a sputtering process, wherein the cathode comprises: a first portion located on a side of the first isolation sub-layer facing away from the substrate, and a second portion located in a region outside the cathode isolation structure, wherein the first portion and the second portion are disconnected from each other. ### Claim 13 (depends on 12) The method according to claim 12, wherein before forming the pixel definition layer on the substrate, the method further comprises: forming a pattern of an anode on the substrate, wherein the pattern of the anode is located within pixel openings of the pixel definition layer to be formed; before forming the pattern of the cathode, the method further comprises: forming a light-emitting function layer located on the anode in the pixel openings. ### Claim 14 A display device, comprising a display panel, the display panel, comprising: a substrate; a pixel definition layer on a side of the substrate; a cathode isolation structure located on a side of the pixel definition layer away from the substrate, and the cathode isolation structure comprising: a first isolation sub-layer, and a second isolation sub-layer located between the pixel definition layer and the first isolation sub-layer, wherein a cross section of the second isolation sub-layer is smaller than a cross section of the first isolation sub-layer in a direction parallel to the substrate, and an orthographic projection of the second isolation sub-layer on the substrate falls within a range of an orthographic projection of the first isolation sub-layer on the substrate; wherein the cathode isolation structure further comprises: a third isolation sub-layer located between the pixel definition layer and the second isolation sub-layer; the cross section of the second isolation sub-layer is smaller than a cross section of the third isolation sub-layer in the direction parallel to the substrate, and the orthographic projection of the second isolation sub-layer on the substrate falls within a range of an orthographic projection of the third isolation sub-layer on the substrate; wherein a material of the first isolation sub-layer and a material of the third isolation sub-layer are inorganic materials, and a material of the second isolation sub-layer is an organic material; wherein the material of the first isolation sub-layer comprises silicon oxide, and the material of the third isolation sub-layer comprises silicon nitride.