# US 12,604,598 B2 · Solid-state imaging device and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,598 B2 - Document ID: US12604598B2 - Status: Granted - Kind: B2 - Application number: 18/043,969 - Filed: 2021-09-15 - Published: 2023-12-14 - Granted: 2026-04-14 - Earliest claimed: 2020-09-25 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Tomoki Hiramatsu; Hideaki Togashi; Nobuhiro Kawai - Web page: https://patentgrep.com/patent/US12604598B2 ## CPC - H10F 39/184: {Infrared image sensors} - H10K 39/32: Organic image sensors - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 39/192: {Colour image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/8027: {Geometry of the photosensitive area} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8053: {Colour filters} - H10F 39/807: {Pixel isolation structures} - H10F 39/811: {Interconnections} - H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} - H10K 30/81: Electrodes - H10K 39/601: {Assemblies of multiple devices comprising at least one organic radiation-sensitive element} - H10F 39/199: {Back-illuminated image sensors} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels arranged in a matrix, in which each of the pixels includes a first semiconductor layer, a photoelectric conversion section disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring extending from the second surface of the first semiconductor layer, a floating diffusion region connected to the first semiconductor layer via the wiring, and a first gate electrode disposed close to the wiring. ## Claims ### Claim 1 A solid-state imaging device, including: a plurality of pixels arranged in a matrix, wherein each of the pixels includes: a first semiconductor layer; a photoelectric conversion section disposed above the first semiconductor layer on a side of a first surface of the first semiconductor layer; an accumulation electrode disposed below the first semiconductor layer close to a side of a second surface of the first semiconductor layer on a side opposite to the first surface of the first semiconductor layer; a readout electrode, wherein at least a portion of the accumulation electrode is disposed between the readout electrode and the photoelectric conversion section; a semiconductor wiring extending from the second surface of the first semiconductor layer to the readout electrode, wherein the semiconductor wiring is a part of the first semiconductor layer; a floating diffusion region connected to the first semiconductor layer via at least the semiconductor wiring and the readout electrode; and a first gate electrode disposed close to the semiconductor wiring. ### Claim 2 (depends on 1) The solid-state imaging device according to claim 1, wherein the accumulation electrode is disposed closer to the first semiconductor layer than the first gate electrode. ### Claim 3 (depends on 1) The solid-state imaging device according to claim 1, wherein the accumulation electrode and the first gate electrode are disposed on a same plane. ### Claim 4 (depends on 1) The solid-state imaging device according to claim 1, wherein adjacent pixels among the plurality of pixels are connected to a common floating diffusion region. ### Claim 5 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a second gate electrode disposed close to the semiconductor wiring at a position closer to the floating diffusion region than the first gate electrode, and a memory electrode disposed close to the semiconductor wiring at a position between the first gate electrode and the second gate electrode. ### Claim 6 (depends on 5) The solid-state imaging device according to claim 5, wherein the first gate electrode is connected between the plurality of pixels, and the memory electrode is connected between the plurality of pixels. ### Claim 7 (depends on 5) The solid-state imaging device according to claim 5, wherein each of the pixels further includes a second semiconductor layer positioned between the first semiconductor layer and the floating diffusion region, the semiconductor wiring includes a first wiring extending from the first semiconductor layer and connected to the second semiconductor layer, and a second wiring extending from the second semiconductor layer and connected to the floating diffusion region, the first gate electrode is disposed close to the first wiring, the memory electrode is disposed close to the second semiconductor layer, and the second gate electrode is disposed close to the second wiring. ### Claim 8 (depends on 1) The solid-state imaging device according to claim 1, wherein the first gate electrode is disposed at a position surrounding a side surface of the semiconductor wiring. ### Claim 9 (depends on 1) The solid-state imaging device according to claim 1, wherein the accumulation electrode is disposed at a position surrounding a side surface of the semiconductor wiring. ### Claim 10 (depends on 1) The solid-state imaging device according to claim 1, wherein a cross section of the semiconductor wiring is circular or polygonal. ### Claim 11 (depends on 1) The solid-state imaging device according to claim 1, wherein the semiconductor wiring has a tapered shape having diameter decreasing from the first semiconductor layer to the floating diffusion region. ### Claim 12 (depends on 1) The solid-state imaging device according to claim 1, wherein a plurality of on-chip lenses disposed on a side opposite to the first semiconductor layer with respect to the photoelectric conversion section, and at least one of the plurality of on-chip lenses is disposed to straddle at least two adjacent pixels among the plurality of pixels. ### Claim 13 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a color filter disposed on a side of a light incident surface of the photoelectric conversion section. ### Claim 14 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a color filter disposed on a side opposite to the photoelectric conversion section sandwiching the first semiconductor layer. ### Claim 15 (depends on 1) The solid-state imaging device according to claim 1, wherein the photoelectric conversion section is an organic film. ### Claim 16 (depends on 1) The solid-state imaging device according to claim 1, wherein the first semiconductor layer includes a first layer in contact with the photoelectric conversion section, and a second layer positioned on a side opposite to the photoelectric conversion section sandwiching the first layer. ### Claim 17 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a shield electrode disposed at a boundary with an adjacent pixel. ### Claim 18 (depends on 1) The solid-state imaging device according to claim 1, wherein each of the pixels further includes a fixed charge film disposed at a boundary with an adjacent pixel. ### Claim 19 (depends on 18) The solid-state imaging device according to claim 18, wherein the fixed charge film has a same polarity as a polarity of a charge generated by photoelectric conversion by the photoelectric conversion section. ### Claim 20 (depends on 1) An electronic apparatus, including: the solid-state imaging device according to claim 1; a lens that forms an image of incident light on the solid-state imaging device; and a processing circuit that executes predetermined processing on a signal output from the solid-state imaging device.