# US 12,604,583 B2 · Hybrid microdisplay > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,583 B2 - Document ID: US12604583B2 - Status: Granted - Kind: B2 - Application number: 17/924,846 - Filed: 2021-06-22 - Published: 2023-06-15 - Granted: 2026-04-14 - Earliest claimed: 2020-06-29 - Assignees: Plessey Semiconductors Limited - Applicants: Plessey Semiconductors Ltd - Inventors: Samir Mezouari; Andrea Pinos; WeiSin Tan - Web page: https://patentgrep.com/patent/US12604583B2 ## CPC - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H 20/01: Manufacture or treatment - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10W 90/00: Package configurations - H10H 20/018: {Bonding of wafers} - H10H 20/0364: {of interconnections} - H10H 20/833: Transparent materials - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method of forming a display comprising: bonding a backplane comprising a plurality of backplane electrical contacts to a monolithic light emitting diode structure comprising a corresponding plurality of electrical contacts, wherein bonding comprises forming a reversible bond between at least one of the plurality of backplane electrical contacts and a corresponding electrical contact of the monolithic light emitting diode structure; and removing material from the monolithic light emitting diode structure to provide a plurality of physically isolated light emitting diode dies, thereby to enable removal and/or replacement of at least one physically isolated light emitting diode die by reversing the reversible bond between the at least one of the plurality of backplane electrical contacts and the corresponding electrical contact of the monolithic light emitting diode structure. ## Claims ### Claim 1 A method of forming a display comprising: planarizing a backplane comprising a plurality of backplane electrical contacts to provide a first planarized surface; planarizing a monolithic light emitting diode structure comprising a plurality of electrical contacts corresponding to the plurality of electrical contacts of the backplane to provide a second planarized surface; bonding the first planarized surface to the second planarized surface, wherein bonding comprises forming a reversible bond between at least one of the plurality of backplane electrical contacts and a corresponding electrical contact of the monolithic light emitting diode structure; and subsequently selectively etching the monolithic light emitting diode structure to provide a plurality of physically isolated light emitting diode dies, thereby to enable removal and/or replacement of at least one physically isolated light emitting diode die by reversing the reversible bond between the at least one of the plurality of backplane electrical contacts and the corresponding electrical contact of the monolithic light emitting diode structure. ### Claim 2 (depends on 1) The method according to claim 1, wherein the at least one of the backplane electrical contacts is reversibly bonded to the corresponding electrical contact of the monolithic light emitting diode structure using metal-to-metal bonding and/or eutectic bonding. ### Claim 3 (depends on 1) The method according to claim 1 comprising: removing at least one physically isolated light emitting diode die; and replacing the at least one physically isolated light emitting diode die with a different one or more light emitting diode dies. ### Claim 4 (depends on 3) The method according to claim 3, wherein removing at least one physically isolated light emitting diode die comprises increasing a temperature of the display thereby to enable removal of the at least one physically isolated light emitting diode die at the reversible bond between the backplane electrical contact and the corresponding electrical contact associated with the monolithic light emitting diode structure, preferably wherein increasing the temperature of the display comprises increasing the temperature at the reversible bond to surpass a eutectic temperature of the reversible bond, preferably wherein the reversible bond comprises at least one of a AuSn eutectic bond, a CuSn eutectic bond and a InSn eutectic bond. ### Claim 5 (depends on 3) The method according to claim 3, wherein removing at least one physically isolated light emitting diode die comprises overcoming an electrostatic force of the reversible bond, preferably wherein the electrostatic force of the reversible bond is the electrostatic force of at least one of a Au—Au metal bond and a Cu—Cu metal bond. ### Claim 6 (depends on 1) The method of claim 1 comprising: testing at least one of the plurality of physically isolated light emitting diode dies; identifying one or more defective light emitting diode dies; removing defective light emitting diode dies; and replacing the one or more removed defective light emitting diode dies. ### Claim 7 (depends on 1) The method according to claim 1, comprising: forming a conformal metal layer on at least a portion of the physically isolated light emitting diode dies, thereby to reduce optical cross talk between physically isolated light emitting diode dies. ### Claim 8 (depends on 1) The method according to claim 1 comprising: forming a transparent electrically conductive layer on the plurality of isolated light emitting diode dies, thereby to provide a common electrode. ### Claim 9 (depends on 1) The method according to claim 1 comprising: forming one or more magnetic metal regions associated with at least one of the physically isolated light emitting diode dies, thereby to facilitate removal of physically isolated light emitting diode dies. ### Claim 10 (depends on 1) The method according to claim 1, wherein at least one of the reversible bonds is at least partially laterally surrounded by a dielectric layer thereby to separate the backplane and the monolithic light emitting diode structure, preferably wherein the dielectric layer comprises at least one of SiO2, Si3N4, Su-8, SrF2, PDMS and PMMA. ### Claim 11 (depends on 1) The method according to claim 1, wherein the plurality of electrical contacts of the monolithic light emitting structure comprises a high reflectivity metal, preferably wherein the high reflectivity metal is one of Ni and Ag. ### Claim 12 (depends on 1) The method according to claim 1, wherein removing material from the monolithic light emitting diode structure comprises forming a discontinuity in at least one layer of the monolithic light emitting diode structure, preferably wherein the at least one layer of the monolithic light emitting diode structure is an n-type layer, more preferably wherein the n-type layer is an n-doped gallium nitride layer. ### Claim 13 A method of forming a display comprising: planarizing a backplane comprising a plurality of backplane electrical contacts to provide a first planarized surface; planarizing a monolithic light emitting diode structure comprising a plurality of electrical contacts corresponding to the plurality of backplane electrical contacts of the backplane to provide a second planarized surface; bonding the first planarized surface to the second planarized surface, wherein bonding comprises forming a reversible bond between at least one of the plurality of backplane electrical contacts and a corresponding electrical contact of the monolithic light emitting diode structure; and subsequently selectively etching the monolithic light emitting diode structure to provide a plurality of physically isolated light emitting diode dies, thereby to enable removal and/or replacement of at least one physically isolated light emitting diode die by reversing the reversible bond between the at least one of the plurality of backplane electrical contacts and the corresponding electrical contact of the monolithic light emitting diode structure; wherein the at least one of the plurality of backplane electrical contacts is reversibly bonded to the corresponding electrical contact of the monolithic light emitting diode structure using metal-to-metal bonding and/or eutectic bonding; wherein at least one of the reversible bonds is at least partially laterally surrounded by a dielectric layer thereby to separate the backplane and the monolithic light emitting diode structure, preferably wherein the dielectric layer comprises at least one of SiO2, Si3N4, Su-8, SrF2, PDMS and PMMA; and wherein the plurality of electrical contacts of the monolithic light emitting structure comprises a high reflectivity metal, preferably wherein the high reflectivity metal is one of Ni and Ag.