# US 12,604,581 B2 · Method for manufacturing electronic device

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- Number: US 12,604,581 B2
- Document ID: US12604581B2
- Status: Granted
- Kind: B2
- Application number: 17/864,369
- Filed: 2022-07-13
- Published: 2023-02-16
- Granted: 2026-04-14
- Earliest claimed: 2021-08-11
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Yuan-Lin Wu; Tsung-Han Tsai; Jia-Yuan Chen; Kuan-Feng Lee
- Web page: https://patentgrep.com/patent/US12604581B2

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 90/00: Package configurations
- H10D 86/0214: {using temporary substrates}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/852: Encapsulations
- H10H 20/0362: {of encapsulations}
- H10H 20/0364: {of interconnections}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for manufacturing an electronic device includes: providing a base layer; forming a patterned circuit layer on the base layer, the patterned circuit layer having a first opening; placing an electronic element on the patterned circuit layer; and patterning the base layer to form a second opening which is at least partially overlapped with the first opening. The step of placing the electronic element is performed after the step of forming the patterned circuit layer.

## Claims

### Claim 1

A method for manufacturing an electronic device, comprising:
providing a base layer;
forming a patterned circuit layer on the base layer, the patterned circuit layer having a first opening;
placing an electronic element on the patterned circuit layer; forming a first encapsulation portion on the electronic element after the step of placing the electronic element;
forming a second encapsulation portion on the first encapsulation portion and a sidewall of the first opening; and
patterning the base layer to form a second opening which is at least partially overlapped with the first opening after the step of forming the second encapsulation portion;
wherein the step of placing the electronic element is performed after the step of forming the patterned circuit layer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the step of forming the patterned circuit layer comprises:
forming an insulation layer on the base layer;
forming a patterned conductive layer on the insulation layer; and
patterning the insulation layer to form at least a part of the first opening after the step of forming the patterned conductive layer.

### Claim 3 (depends on 2)

The method according to claim 2, wherein the insulation layer and the base layer are patterned by different processes.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the insulation layer is patterned by an etching process, and the base layer is patterned by a laser drilling process.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the step of forming the patterned circuit layer comprises:
forming an insulation layer on the base layer;
patterning the insulation layer to form at least a part of the first opening; and
forming a patterned conductive layer after the step of patterning the insulation layer.

### Claim 6 (depends on 5)

The method according to claim 5, wherein the insulation layer and the base layer are patterned by different processes.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the insulation layer is patterned by an etching process, and the base layer is patterned by a laser drilling process.

### Claim 8 (depends on 1)

The method according to claim 1, further comprising filling an elastic material in the first opening.

### Claim 9 (depends on 8)

The method according to claim 8, wherein the step of patterning the base layer is performed after the step of filling the elastic material in the first opening.

### Claim 10 (depends on 1)

The method according to claim 1, further comprising filling an elastic material in the first opening and the second opening after the step of patterning the base layer.

### Claim 11 (depends on 1)

The method according to claim 1, further comprising:
providing a carrier;
attaching the base layer on the carrier;
flipping the carrier and the base layer as a whole;
removing the carrier; and
attaching an elastic substrate under the base layer.

### Claim 12 (depends on 1)

The method according to claim 1, wherein the first opening is communicated with the second opening.