# US 12,604,566 B2 · LED structure and manufacturing method thereof, and LED device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,566 B2 - Document ID: US12604566B2 - Status: Granted - Kind: B2 - Application number: 18/166,885 - Filed: 2023-02-09 - Published: 2023-09-07 - Granted: 2026-04-14 - Earliest claimed: 2022-03-02 - Assignees: Enkris Semiconductor (Wuxi), Ltd. - Applicants: Enkris Semiconductor (Wuxi), Ltd. - Inventors: Weihua Liu - Web page: https://patentgrep.com/patent/US12604566B2 ## CPC - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8516: {having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient} - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate. ## Claims ### Claim 1 A light-emitting diode (LED) structure, comprising: a substrate structure, the substrate structure comprising a substrate and a plurality of first stress modulation layers located on the substrate separately from each other; and a light-emitting unit located on the substrate structure; wherein the substrate structure comprises a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths. ### Claim 2 (depends on 1) The LED structure according to claim 1, wherein a marital of the plurality of first stress modulation layer is a Group I-V compound, and a lattice constant of the plurality of first stress modulation layer is smaller than a lattice constant of the light-emitting unit. ### Claim 3 (depends on 1) The LED structure according to claim 1, wherein the light-emitting unit comprises In element, and a content of In in the light-emitting unit located on the first region is smaller than a content of In in the light-emitting unit located on the second region. ### Claim 4 (depends on 1) The LED structure according to claim 1, wherein the plurality of first stress modulation layers are arranged periodically. ### Claim 5 (depends on 1) The LED structure according to claim 1, wherein the light-emitting unit comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked in sequence. ### Claim 6 (depends on 5) The LED structure according to claim 5, wherein an insertion layer is provided in the first semiconductor layer, and a conductivity type of the insertion layer is the same as a conductivity type of the first semiconductor layer. ### Claim 7 (depends on 5) The LED structure according to claim 5, wherein the LED structure further comprises a second stress modulation layer, and the second stress modulation layer is located between the first semiconductor layer and the light-emitting layer. ### Claim 8 (depends on 7) The LED structure according to claim 7, wherein the second stress modulation layer has a superlattice structure comprising a Group II-V compound material. ### Claim 9 (depends on 1) The LED structure according to claim 1, wherein a thickness of the first stress modulation layer is less than 30 nm. ### Claim 10 (depends on 1) The LED structure according to claim 1, wherein the LED structure further comprises: a first electrode, electrically connected to the first semiconductor layer; and a second electrode, electrically connected to the second semiconductor layer. ### Claim 11 (depends on 1) The LED structure according to claim 1, wherein the first region and the second region are arranged periodically and alternately. ### Claim 12 (depends on 1) The LED structure according to claim 1, wherein the light-emitting unit is formed on the substrate structure by means of epitaxial growth. ### Claim 13 (depends on 1) The LED structure according to claim 1, wherein the materials of the first stress modulation layer and the substrate are different, so that the light-emitting unit formed on the first region and the light-emitting unit formed on the second region by the same process have different light-emitting wavelengths. ### Claim 14 (depends on 1) An LED device, comprising: the LED structure according to claim 1; a package substrate located on a side of the substrate structure away from the light-emitting unit; an encapsulation adhesive, the encapsulation adhesive covering an upper surface and side walls of the LED structure, and the encapsulation adhesive comprising a phosphor material. ### Claim 15 (depends on 14) The LED device according to claim 14, wherein a width of the LED structure is less than 100 pm. ### Claim 16 (depends on 14) The LED device according to claim 14, wherein a width of the first stress modulation layer is less than 50 μm. ### Claim 17 (depends on 14) The LED device according to claim 14, wherein in the LED structure, light emitted by the light-emitting unit located on a first region is blue light, and light emitted by the light-emitting unit located on a second region is green light; and red light phosphors are provided in at least a partial of the encapsulation adhesive. ### Claim 18 (depends on 14) The LED device according to claim 14, wherein the encapsulation adhesive above the first region does not contain a phosphor material, and the encapsulation adhesive above at least a partial of the second region is provided with red light phosphors. ### Claim 19 (depends on 14) The LED device according to claim 14, wherein the encapsulation adhesive above the second region does not contain a phosphor material, and the encapsulation adhesive above at least a partial of the first region is provided with red light phosphors. ### Claim 20 A manufacturing method for an LED structure, comprising: providing a substrate; forming a plurality of first stress modulation layers located on the substrate separately to form a substrate structure comprising a substrate and a plurality of first stress modulation layers located on the substrate separately; and forming a light-emitting unit on the substrate structure by an epitaxial growth process; wherein the substrate structure comprises a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit formed on the first region and a light-emitting unit formed on the second region have different light-emitting wavelengths.