# US 12,604,559 B2 · Passivated contact structure, solar cell, module and system

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- Number: US 12,604,559 B2
- Document ID: US12604559B2
- Status: Granted
- Kind: B2
- Application number: 19/242,841
- Filed: 2025-06-18
- Published: 2025-10-09
- Granted: 2026-04-14
- Earliest claimed: 2022-12-19
- Assignees: Zhejiang Aiko Solar Technology Co., Ltd.; Zhuhai Fushan Aiko Solar Technology Co., Ltd.; Tianjin Aiko Solar Technology Co., Ltd.; Guangdong Aiko Solar Technology Co., Ltd.
- Applicants: Zhejiang Aiko Solar Technology Co., Ltd.; Zhuhai Fushan Aiko Solar Technology Co., Ltd.; Tianjin Aiko Solar Technology Co., Ltd.; Guangdong Aiko Solar Technology Co., Ltd.
- Inventors: Yuanzhao Tang; Kaifu Qiu; Yongqian Wang; Wenjie Lin; Xinqiang Yang; Gang Chen
- Web page: https://patentgrep.com/patent/US12604559B2

## CPC

- H10F 10/165: the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F 77/211: {for photovoltaic cells}
- H10F 77/1223: characterised by the dopants
- H10F 77/1642: {including only Group IV materials}
- H10F 77/311: {for photovoltaic cells}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.

## Claims

### Claim 1

A passivated contact structure of a solar cell, comprising:
a silicon substrate; and
a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein
a local region of the first silicon oxide layer comprises a thinned region, and a proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region.

### Claim 2 (depends on 1)

The passivated contact structure of the solar cell according to claim 1, wherein a doping element of the doped layer and a doping element of the first silicon oxide layer are either a third main group element or a fifth main group element.

### Claim 3 (depends on 2)

The passivated contact structure of the solar cell according to claim 2, wherein the third main group element is a boron.

### Claim 4 (depends on 2)

The passivated contact structure of the solar cell according to claim 2, wherein the fifth main group element is a phosphorus.

### Claim 5 (depends on 1)

The passivated contact structure of the solar cell according to claim 1, wherein a thickness of the first silicon oxide layer and a thickness of the second silicon dioxide layer are both less than or equal to 3 nm.

### Claim 6 (depends on 5)

The passivated contact structure of the solar cell according to claim 5, wherein the thickness of the first silicon oxide layer is less than or equal to 2.5 nm, and the thickness of the second silicon dioxide layer is less than or equal to 2 nm.

### Claim 7 (depends on 1)

The passivated contact structure of the solar cell according to claim 1, wherein the doped layer is a doped polysilicon layer.

### Claim 8 (depends on 1)

The passivated contact structure of the solar cell according to claim 1, wherein the passivation layer is one or a combination of more of an oxide layer, a silicon carbide layer and an amorphous silicon layer.

### Claim 9 (depends on 1)

A solar cell, wherein the solar cell is a topcon cell or a back-contact cell, and the topcon cell or the back-contact cell comprises the passivated contact structure of the solar cell according to claim 1.

### Claim 10 (depends on 9)

A solar cell module, wherein the solar cell module comprises the solar cell according to claim 9.

### Claim 11 (depends on 10)

A solar cell system, wherein the solar cell system comprises the solar cell module according to claim 10.