# US 12,604,558 B2 · Light detecting device having a gradient layer with multiple sublayers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,558 B2 - Document ID: US12604558B2 - Status: Granted - Kind: B2 - Application number: 18/192,430 - Filed: 2023-03-29 - Published: 2024-05-16 - Granted: 2026-04-14 - Earliest claimed: 2022-11-11 - Assignees: Landmark Optoelectronics Corporation - Applicants: LandMark Optoelectronics Corporation - Inventors: Hung-Wen Huang; Yung-Chao Chen; Yi-Hsiang Wang; Wei Lin - Web page: https://patentgrep.com/patent/US12604558B2 ## CPC - H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies - H10F 77/169: Thin semiconductor films on metallic or insulating substrates - H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP} - H10F 77/146: {Superlattices; Multiple quantum well structures} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A light detecting device includes a substrate that has a lattice constant. A buffer layer is disposed on the substrate. A gradient layer is formed on the buffer layer opposite to the substrate, and includes a plurality of sublayers that have respectively lattice constants each of which is greater than the lattice constant of the substrate. The sublayers are arranged in a manner that the lattice constants of the sublayers undergo a gradual increase in lattice constant in a direction away from the substrate. A barrier layer is formed on the gradient layer opposite to the buffer layer, and has a lattice constant which is greater than that of the substrate and no smaller than the lattice constants of the sublayers. An absorption layer is formed on the barrier layer opposite to the gradient layer. ## Claims ### Claim 1 A light detecting device, comprising: a substrate having a lattice constant that is a reference value; a buffer layer disposed on said substrate; a gradient layer formed on said buffer layer opposite to said substrate, and including a plurality of sublayers that have respectively a plurality of lattice constants each of which is greater than said reference value of said lattice constant of said substrate, said sublayers being arranged in such a manner that said lattice constants of said sublayers undergo a gradual increase in lattice constant in a direction away from said substrate; a barrier layer formed on said gradient layer opposite to said buffer layer and having a predetermined lattice constant which is greater than said reference value of said substrate and no smaller than said lattice constants of said sublayers; and an absorption layer formed on said barrier layer opposite to said gradient layer, wherein said gradient layer, said barrier layer and said absorption layer are epitaxially grown in a direction that forms a growth angle with a line normal to said substrate, said growth angle ranging from 6 degrees to 14 degrees. ### Claim 2 (depends on 1) The light detecting device as claimed in claim 1, wherein said substrate has a first element, and said barrier layer has said first element and a second element different from said first element, each of said sublayers of said gradient layer having said first element and said second element, a ratio of said first element to said second element in said sublayers gradually decreasing in a direction from said substrate to said barrier layer. ### Claim 3 (depends on 2) The light detecting device as claimed in claim 2, wherein said first element is gallium, and said second element is indium. ### Claim 4 (depends on 3) The light detecting device as claimed in claim 3, wherein said substrate is made of gallium arsenide, and said barrier layer is made of indium gallium arsenide. ### Claim 5 (depends on 3) The light detecting device as claimed in claim 3, wherein said gradient layer is made of indium gallium arsenide. ### Claim 6 (depends on 3) The light detecting device as claimed in claim 3, wherein the ratio of said first element to said second element of each of said sublayers of said gradient layer is defined to be (1−X):X, X ranging from 0.03 to 0.24. ### Claim 7 (depends on 3) The light detecting device as claimed in claim 3, wherein said substrate is made of gallium arsenide, and said barrier layer is made of indium gallium phosphide. ### Claim 8 (depends on 7) The light detecting device as claim in claim 7, wherein said gradient layer is made of indium gallium phosphide. ### Claim 9 (depends on 7) The light detecting device as claimed in claim 7, wherein the ratio of said first element to said second element of each of said sublayers of said gradient layer is defined to be (1−X):X, X ranging from 0.48 to 0.72. ### Claim 10 (depends on 2) The light detecting device as claimed in claim 2, wherein one of said sublayers of said gradient layer is in direct contact with said barrier layer, the ratio of said first element to said second element of said one of said sublayers being identical to a ratio of said first element to said second element of said barrier layer. ### Claim 11 (depends on 2) The light detecting device as claimed in claim 2, wherein said absorption layer is made of indium gallium arsenide. ### Claim 12 (depends on 1) The light detecting device as claimed in claim 1 further comprising a window layer formed on said absorption layer opposite to said barrier layer and having at least one light entering opening. ### Claim 13 (depends on 12) The light detecting device as claimed in claim 12, wherein said window layer is made of indium gallium phosphide.