Solid-state imaging element
AssigneeSony Semiconductor Solutions Corporation
InventorShunsuke Maruyama
Life of this patent
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Abstract
Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-type semiconductor thin film) containing a compound semiconductor. In addition, the solid-state imaging element includes a pixel separating section disposed only at a pixel boundary extending in the X direction.
Claims18
A solid-state imaging element, comprising:
- a plurality of pixels in a two-dimensional matrix in an X direction and a Y direction, wherein
- each pixel of the plurality of pixels includes a photoelectric conversion unit, and
- the photoelectric conversion unit includes-containing a compound semiconductor;
- a pixel separating section only at a pixel boundary that extends in the X direction, wherein
- the pixel separating section divides the plurality of pixels into a plurality of pixel groups;
- and
- a cylindrical on-chip lens for each pixel group of the plurality of pixel groups, wherein the cylindrical on-chip lens is on a light entrance side of the photoelectric conversion unit.
A solid-state imaging element, comprising:
- a plurality of pixels in a two-dimensional matrix in an X direction and a Y direction, wherein
- each pixel of the plurality of pixels includes a photoelectric conversion unit, and
- the photoelectric conversion unit includes a compound semiconductor;
- and
- a pixel separating section only at a pixel boundary that extends in the X direction, wherein
- the plurality of pixels includes a first pixel and a second pixel,
- the pixel separating section includes a groove between the photoelectric conversion unit of the first pixel and the photoelectric conversion unit of the second pixel,
- the photoelectric conversion unit of the first pixel is adjacent to the photoelectric conversion unit of the second pixel, and
- the groove includes an insulating film.
A solid-state imaging element, comprising:
- a plurality of pixels in a two-dimensional matrix in an X direction and a Y direction, wherein
- each pixel of the plurality of pixels includes a photoelectric conversion unit, and
- the photoelectric conversion unit includes a compound semiconductor;
- and
- a pixel separating section only at a pixel boundary that extends in the X direction, wherein
- the plurality of pixels includes a first pixel and a second pixel,
- the pixel separating section is between a first pixel electrode of the photoelectric conversion unit of the first pixel and a second pixel electrode of the photoelectric conversion unit of the second pixel,
- the photoelectric conversion unit of the first pixel is adjacent to the photoelectric conversion unit of the second pixel, and
- the pixel separating section being an impurity region of a type same as a type of the first pixel electrode and the second pixel electrode.
Dependencies are inferred from the claim text.