# US 12,604,537 B2 · High mobility transistor element resulting from IGTO oxide semiconductor crystallization, and production method for same

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- Number: US 12,604,537 B2
- Document ID: US12604537B2
- Status: Granted
- Kind: B2
- Application number: 18/269,215
- Filed: 2021-11-02
- Published: 2024-03-14
- Granted: 2026-04-14
- Earliest claimed: 2020-12-23
- Assignees: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Applicants: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Inventors: Jae Kyeong Jeong; Bo Kyoung Kim; Nuri On
- Web page: https://patentgrep.com/patent/US12604537B2

## CPC

- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 62/80: characterised by the materials
- H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)}
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3241: {being conductive materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3434: {being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424)}
- H10P 14/3454: {Amorphous}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 74/43: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Various embodiments pertain to a high mobility transistor element resulting from IGTO oxide semiconductor crystallization, and a production method for same, the transistor element comprising a substrate and a crystalline IGTO channel layer disposed on the substrate, and being produced by converting a non-crystalline IGTO channel layer provided on the substrate to a crystalline IGTO channel layer.

## Claims

### Claim 1

A manufacturing method of a transistor element, the method comprising:
providing an amorphous indium gallium tin oxide (IGTO) channel layer on a substrate; and
converting the amorphous IGTO channel layer to a crystalline IGTO channel layer through heat treatment.

### Claim 2 (depends on 1)

The method of claim 1, wherein the providing of the amorphous IGTO channel layer comprises depositing the amorphous IGTO channel layer on the substrate using a sputtering method.

### Claim 3 (depends on 1)

The method of claim 1, wherein the converting to the crystalline IGTO channel layer comprises performing the heat treatment at a heat treatment temperature of 400° C.

### Claim 4 (depends on 1)

The method of claim 1, wherein a thickness of the amorphous IGTO channel layer is 20 nm.

### Claim 5 (depends on 1)

The method of claim 1, wherein cation composition ratios of indium (In), gallium (Ga), and tin (Sn) in the crystalline IGTO channel layer are 78%, 18%, and 4%.

### Claim 6 (depends on 1)

The method of claim 1, wherein the providing of the amorphous IGTO channel layer comprises:
providing a first electrode on the substrate;
providing the amorphous IGTO channel layer to cover the first electrode on the substrate; and
providing at least one second electrode on the amorphous IGTO channel layer.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
providing a protective layer to cover the crystalline IGTO channel layer on the substrate.

### Claim 8 (depends on 6)

The method of claim 6, wherein the providing of the amorphous IGTO channel layer further comprises providing an insulating layer on the first electrode before providing the amorphous IGTO channel layer.

### Claim 9 (depends on 1)

The method of claim 1, wherein the amorphous IGTO channel layer is a single layer.

### Claim 10

A transistor element comprising:
a substrate; and
a crystalline indium gallium tin oxide (IGTO) channel layer provided on the substrate,
wherein the crystalline IGTO channel layer is converted from an amorphous IGTO channel layer that is provided on the substrate through heat treatment.

### Claim 11 (depends on 10)

The transistor element of claim 10, wherein the amorphous IGTO channel layer is deposited on the substrate using a sputtering method.

### Claim 12 (depends on 10)

The transistor element of claim 10, wherein the crystalline IGTO channel layer is converted from the amorphous IGTO channel layer through the heat treatment at a heat treatment temperature of 400° C.

### Claim 13 (depends on 10)

The transistor element of claim 10, wherein a thickness of the amorphous IGTO channel layer is 20 nm.

### Claim 14 (depends on 10)

The transistor element of claim 10, wherein cation composition ratios of indium (In), gallium (Ga), and tin (Sn) in the crystalline IGTO channel layer are 78%, 18%, and 4%.

### Claim 15 (depends on 10)

The transistor element of claim 10, further comprising at least one of:
a first electrode provided between the substrate and the crystalline IGTO channel layer on the substrate;
an insulating layer provided between the first electrode and the crystalline IGTO channel layer;
at least one second electrode provided on the crystalline IGTO channel layer; or
a protective layer formed to cover at least one of the first electrode, the insulating layer, or the second electrode on the substrate.