# US 12,604,536 B2 · Semiconductor device and method for manufacturing semiconductor device

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- Number: US 12,604,536 B2
- Document ID: US12604536B2
- Status: Granted
- Kind: B2
- Application number: 17/912,753
- Filed: 2021-03-12
- Published: 2023-05-11
- Granted: 2026-04-14
- Earliest claimed: 2020-03-26
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Yoichi Iikubo; Daisuke Yamaguchi; Yuichi Yanagisawa
- Web page: https://patentgrep.com/patent/US12604536B2

## CPC

- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10D 30/021: {of FETs having insulated gates [IGFET]}
- H10D 30/674: {characterised by the active materials}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10B 12/05: {Making the transistor}
- H10B 41/70: the floating gate being an electrode shared by two or more components
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A method for manufacturing a semiconductor device with a high yield is provided. In a semiconductor device including an oxide semiconductor over a substrate, when an insulator in contact with the oxide semiconductor, such as a gate insulator or an interlayer film, is deposited, the insulator can be deposited without diffusion of hydrogen into the oxide semiconductor by setting a constant derived from deposition conditions within a given range. Specifically, setting values of deposition power, the effective electrode area, deposition pressure, and the flow rate of a deposition gas containing hydrogen in the deposition conditions can be selected as appropriate.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
forming an oxide semiconductor over a substrate;
forming a conductor over and in contact with the oxide semiconductor;
removing part of the conductor and part of the oxide semiconductor, thereby forming an island-shaped conductor and an island-shaped oxide semiconductor, and
forming an insulator over the island-shaped conductor by a chemical vapor deposition method under conditions satisfying a relation of Formula (1) below,
[
Formula
⁢
1
]

0
<
(
PW
[
W
]
/
S
[
cm
2
]
)
×
P
[
P
⁢
a
]
f
[
sccm
]
≤
8
(
1
)
wherein PW [W] represents a deposition power, S [cm2] represents an effective electrode area, P [Pa] represents a deposition pressure, and f [sccm] represents a flow rate of a silane-based deposition gas,
wherein PW [W] is 85 or less, and
wherein P [Pa] is 100 or less.

### Claim 2 (depends on 1)

The method for manufacturing a semiconductor device, according to claim 1, further comprising:
removing part of the island-shaped conductor, thereby exposing the island-shaped oxide semiconductor,
wherein the insulator is deposited in an exposed region of the island-shaped oxide semiconductor.

### Claim 3 (depends on 2)

The method for manufacturing a semiconductor device, according to claim 2, further comprising:
depositing a metal oxide film over and in contact with the island-shaped conductor.

### Claim 4 (depends on 3)

The method for manufacturing a semiconductor device, according to claim 3, wherein the metal oxide film inhibits diffusion of hydrogen and impurities.

### Claim 5 (depends on 4)

The method for manufacturing a semiconductor device, according to claim 4, wherein the metal oxide film is an insulating film.

### Claim 6 (depends on 1)

The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor is an In—Ga—Zn oxide.

### Claim 7 (depends on 1)

The method for manufacturing a semiconductor device, according to claim 1, wherein the conductor comprises nitrogen.

### Claim 8 (depends on 1)

The method for manufacturing a semiconductor device, according to claim 1, wherein P [Pa] is 40 or less.

### Claim 9 (depends on 1)

The method for manufacturing a semiconductor device, according to claim 1, further comprising:
removing part of the insulator and part of the island-shaped conductor, thereby exposing the island-shaped oxide semiconductor.

### Claim 10

A method for manufacturing a semiconductor device, comprising:
forming an oxide semiconductor over a substrate;
forming a conductor over and in contact with the oxide semiconductor;
removing part of the conductor and part of the oxide semiconductor, thereby forming an island-shaped conductor and an island-shaped oxide semiconductor, and
forming an insulator over the island-shaped conductor by a chemical vapor deposition method under conditions satisfying a relation of Formula (2) below,
[
Formula
⁢
2
]

0
<
(
PW
[
W
]
/
S
[
cm
2
]
)
×
P
[
P
⁢
a
]
f
[
sccm
]
≤
7
(
2
)
wherein PW [W] represents a deposition power, S [cm2] represents an effective electrode area, P [Pa] represents a deposition pressure, and f [sccm] represents a flow rate of a silane-based deposition gas,
wherein PW [W] is 85 or less, and
wherein P [Pa] is 100 or less.

### Claim 11 (depends on 10)

The method for manufacturing a semiconductor device, according to claim 10, further comprising:
removing part of the island-shaped conductor, thereby exposing the island-shaped oxide semiconductor,
wherein the insulator is deposited in an exposed region of the island-shaped oxide semiconductor.

### Claim 12 (depends on 11)

The method for manufacturing a semiconductor device, according to claim 11, further comprising:
depositing a metal oxide film over and in contact with the island-shaped conductor.

### Claim 13 (depends on 12)

The method for manufacturing a semiconductor device, according to claim 12, wherein the metal oxide film inhibits diffusion of hydrogen and impurities.

### Claim 14 (depends on 12)

The method for manufacturing a semiconductor device, according to claim 12, wherein the metal oxide film is an insulating film.

### Claim 15 (depends on 10)

The method for manufacturing a semiconductor device, according to claim 10, wherein the oxide semiconductor is an In—Ga—Zn oxide.

### Claim 16 (depends on 10)

The method for manufacturing a semiconductor device, according to claim 10, wherein the conductor comprises nitrogen.

### Claim 17 (depends on 10)

The method for manufacturing a semiconductor device, according to claim 10, wherein P [Pa] is 40 or less.

### Claim 18 (depends on 10)

The method for manufacturing a semiconductor device, according to claim 10, further comprising:
removing part of the insulator and part of the island-shaped conductor, thereby exposing the island-shaped oxide semiconductor.