Microelectronic devices including vertical inverters, and electronic systems

A microelectronic device, comprising:

• a vertical inverter, comprising:
• a pillar structure vertically extending above a first conductive line, the pillar structure comprising:
• a first vertical transistor vertically overlying and in electrical communication with the first conductive line;
• a second conductive line vertically overlying the first conductive line and electrically isolated from the first conductive line by a dielectric material, the second conductive line configured to be coupled to a ground structure;
• a second vertical transistor horizontally neighboring the first vertical transistor and in electrical communication with the second conductive line, the second vertical transistor horizontally spaced from the first vertical transistor by the dielectric material;
• and
• at least one electrode horizontally extending along a channel region of the first vertical transistor and an additional channel region of the second vertical transistor;
• wherein the dielectric material is directly adjacent the channel region of the first vertical transistor and the additional channel region of the second vertical transistor.