# US 12,604,497 B2 · Thin film transistor and array substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,497 B2 - Document ID: US12604497B2 - Status: Granted - Kind: B2 - Application number: 17/266,655 - Filed: 2020-12-30 - Published: 2024-02-08 - Granted: 2026-04-14 - Earliest claimed: 2020-12-28 - Assignees: Tcl China Star Optoelectronics Technology Co., Ltd. - Applicants: TCL China Star Optoelectronics Technology Co., Ltd. - Inventors: Xiaobo Hu - Web page: https://patentgrep.com/patent/US12604497B2 ## CPC - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10D 30/6737: {characterised by the electrode materials} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10D 64/669: {the conductor further comprising additional layers of alloy material, compound material or organic material, e.g. TaN/TiAlN} - H10D 86/60: wherein the TFTs are in active matrices - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present application discloses a thin film transistor and an array substrate. The thin film transistor includes a gate electrode, a source electrode, and a drain electrode, and at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer. The composite film layer includes a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers. The alloy layer covering a surface of the low reflection functional layer can enhance stability of the low reflection functional layer. Because adhesion between the alloy layer and dielectric layers such as silicon oxide, silicon nitride, and silicon oxynitride is stronger than that of the low reflection functional layer, the bulge phenomenon is not easy to occur under a high temperature environment. ## Claims ### Claim 1 A thin film transistor comprising a substrate, the thin film transistor further comprising: a gate electrode disposed on a side surface of the substrate; a gate insulating layer covering the gate electrode and the substrate; an active layer disposed on a side surface of the gate insulating layer away from the gate electrode; a source electrode and a drain electrode disposed on a side surface of the active layer away from the gate insulating layer; a passivation layer configured to cover the active layer, the source electrode, and the drain electrode; wherein at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer, and the composite film layer comprises a first metal layer, a second metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers, wherein the alloy layer comprises metal ions dispersed inside a first metal oxide layer, the metal ions comprise at least one of tantalum ion, niobium ion, titanium ion, nickel ion, or tungsten ion, and wherein the low reflection functional layer is a second metal oxide layer without any metal ions. ### Claim 2 (depends on 1) The thin film transistor of claim 1, wherein the alloy layer is formed by implanting the metal ions into the first metal oxide layer. ### Claim 3 (depends on 2) The thin film transistor of claim 2, wherein the second metal oxide layer is between the second metal layer and the first metal oxide layer. ### Claim 4 (depends on 1) The thin film transistor of claim 1, wherein the first metal layer and the second metal layer are laminated layers comprising at least one or more of molybdenum, copper, aluminum, and silver. ### Claim 5 (depends on 1) The thin film transistor of claim 1, wherein the low reflection functional layer and the alloy layer comprises a same metal oxide. ### Claim 6 (depends on 1) The thin film transistor of claim 1, wherein the first metal layer is a molybdenum layer, the second metal layer is a copper layer, the low reflection functional layer is a molybdenum oxide layer, and the alloy layer is a molybdenum oxide layer implanted with the metal ions. ### Claim 7 (depends on 6) The thin film transistor of claim 6, wherein a relative atomic mass ratio of the metal ions to molybdenum atom in the alloy layer ranges from 0.005 to 0.5. ### Claim 8 (depends on 1) The thin film transistor of claim 1, wherein the gate insulating layer and the passivation layer are made of a material comprising at least one of silicon oxide, silicon nitride, or silicon oxynitride. ### Claim 9 A thin film transistor, comprising a gate electrode, a source electrode, and a drain electrode, wherein at least one of the gate electrode, the source electrode, or the drain electrode is a composite film layer, and the composite film layer comprises a metal layer, a low reflection functional layer, and an alloy layer which are arranged in layers, wherein the alloy layer comprises metal ions dispersed inside a first metal oxide layer, the metal ions comprise at least one of tantalum ion, niobium ion, titanium ion, nickel ion, or tungsten ion, and wherein the low reflection functional layer is a second metal oxide layer without any metal ions. ### Claim 10 (depends on 9) The thin film transistor of claim 9, wherein the metal layer comprises a first metal layer and a second metal layer; wherein the first metal layer is disposed on a substrate; and wherein the second metal layer is arranged between the first metal layer and the low reflection functional layer. ### Claim 11 (depends on 10) The thin film transistor of claim 10, wherein the first metal layer is a molybdenum layer, the second metal layer is a copper layer, the low reflection functional layer is a molybdenum oxide layer, and the alloy layer is a molybdenum oxide layer implanted with the metal ions. ### Claim 12 (depends on 11) The thin film transistor of claim 11, wherein a relative atomic mass ratio of the metal ions to molybdenum atom in the alloy layer ranges from 0.005 to 0.5. ### Claim 13 (depends on 9) The thin film transistor of claim 9, wherein the alloy layer is formed by implanting the metal ions into the first metal oxide layer. ### Claim 14 (depends on 13) The thin film transistor of claim 13, wherein the second metal oxide layer is between the metal layer and the first metal oxide layer. ### Claim 15 (depends on 9) The thin film transistor of claim 9, wherein the metal layer is laminated layers comprising at least one or more of molybdenum, copper, aluminum, and silver, the low reflection functional layer is a molybdenum oxide layer, and the alloy layer is a molybdenum oxide layer implanted with the metal ions. ### Claim 16 (depends on 9) An array substrate, comprising the thin film transistor of claim 9.