# US 12,604,486 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,486 B2 - Document ID: US12604486B2 - Status: Granted - Kind: B2 - Application number: 18/182,507 - Filed: 2023-03-13 - Published: 2023-12-14 - Granted: 2026-04-14 - Earliest claimed: 2022-05-23 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Young-Lim Park; Woo Seop Lim; Ji Min Chae; Chang Mu An; Jae Soon Lim - Web page: https://patentgrep.com/patent/US12604486B2 ## CPC - H10D 1/042: {using deposition processes to form electrode extensions} - H10D 1/696: {comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688)} - H10B 12/033: {the capacitor extending over the transistor} - H10B 12/315: {with the capacitor higher than a bit line} - H10D 1/716: {having vertical extensions} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film. ## Claims ### Claim 1 A semiconductor device comprising: a substrate; a lower electrode on the substrate; a first lower interfacial film on the lower electrode and in contact with the lower electrode; a dielectric film on the first lower interfacial film; a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film; a first upper interfacial film on the dielectric film; a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film; and an upper electrode on the first upper interfacial film, wherein the first upper interfacial film is in contact with the upper electrode, wherein the first lower interfacial film is a conductive single film, the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include a same first metal element, wherein an electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than an electronegativity of a second metal element included in the dielectric film, and wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element. ### Claim 2 (depends on 1) The device of claim 1, wherein the first lower interfacial film and the first upper interfacial film are a same material. ### Claim 3 (depends on 1) The device of claim 1, wherein a difference between the electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film and the electronegativity of the second metal element included in the dielectric film is greater than 0.05. ### Claim 4 (depends on 1) The device of claim 1, wherein the lower electrode and the upper electrode include a same conductive material. ### Claim 5 (depends on 1) The device of claim 1, wherein the lower electrode extends in an elongated manner in a thickness direction of the substrate. ### Claim 6 (depends on 1) The device of claim 1, wherein the lower electrode includes a first extension extending along a top face of the substrate, and a second extension protruding from one end of the first extension and extending in a thickness direction of the substrate. ### Claim 7 (depends on 1) The device of claim 1, wherein each of the first lower interfacial film and the first upper interfacial film includes a nitride of the same first metal element. ### Claim 8 (depends on 1) The device of claim 1, wherein the dielectric film includes at least one of aluminum oxide, zirconium oxide or hafnium oxide. ### Claim 9 (depends on 1) The device of claim 1, wherein the same first metal element included in each of the first lower interfacial film and the first upper interfacial film includes one of niobium (Nb), tantalum (Ta), tin (Sn), zirconium (Zr) and titanium (Ti). ### Claim 10 A semiconductor device comprising: a substrate; a lower electrode on the substrate; a first lower interfacial film on the lower electrode and in contact with the lower electrode and including a nitride of a first metal element; a dielectric film on the first lower interfacial film; a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film; a first upper interfacial film on the dielectric film and including the nitride of the first metal element; an upper electrode on the first upper interfacial film; and a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film, wherein the first upper interfacial film is in contact with the upper electrode, wherein an electronegativity of the first metal element is greater than an electronegativity of a second metal element included in the dielectric film, and wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element. ### Claim 11 (depends on 10) The device of claim 10, wherein the first metal element and the third metal element are different from each other, and an electronegativity of the third metal element is greater than the electronegativity of the second metal element included in the dielectric film. ### Claim 12 (depends on 10) The device of claim 10, wherein the dielectric film includes at least one of hafnium (Hf) and zirconium (Zr), and the first metal element of each of the first lower interfacial film and the first upper interfacial film includes at least one of tin (Sn), niobium (Nb) and tantalum (Ta). ### Claim 13 (depends on 10) The device of claim 10, wherein each of the first lower interfacial film and the first upper interfacial film is a single film. ### Claim 14 A semiconductor device comprising: a substrate; the substrate defining a trench; a gate electrode filling a portion of the trench; a buried contact on at least one side of the gate electrode and connected to the substrate; a landing pad on the buried contact; and a capacitor connected to the landing pad, wherein the capacitor includes, a lower electrode on the substrate, a first lower interfacial film on the lower electrode and in contact with the lower electrode, a dielectric film on the lower interfacial film, a second lower interfacial film between the first lower interfacial film and the dielectric film and in contact with the first lower interfacial film, a first upper interfacial film on the dielectric film, a second upper interfacial film between the first upper interfacial film and the dielectric film and in contact with the first upper interfacial film, and an upper electrode on the first upper interfacial film, wherein the first upper interfacial film is in contact with the upper electrode, wherein the upper and lower electrodes include a same conductive material, wherein the first lower interfacial film is a single film and the first upper interfacial film is a single film, and the first lower interfacial film and the first upper interfacial film include a same first metal element, wherein an electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than an electronegativity of a second metal element included in the dielectric film, and wherein the second lower interfacial film is a conductive single film and the second upper interfacial film is a conductive single film, and the second lower interfacial film and the second upper interfacial film include an oxynitride of a third metal element. ### Claim 15 (depends on 14) The device of claim 14, further comprising: a supporter surrounding a sidewall of the lower electrode and contacting the first lower interfacial film. ### Claim 16 (depends on 15) The device of claim 15, wherein a top face of the lower electrode and a top face of the supporter are coplanar with each other. ### Claim 17 (depends on 15) The device of claim 15, wherein the supporter includes a plurality of supporter patterns spaced apart from each other in a direction perpendicular to a top face of the substrate. ### Claim 18 (depends on 14) The device of claim 14, wherein a difference between the electronegativity of the same first metal element included in each of the first lower interfacial film and the first upper interfacial film and the electronegativity of the second metal element included in the dielectric film is greater than 0.05.