# US 12,604,484 B2 · Semiconductor device including data storage structure and method of manufacturing data storage structure

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- Number: US 12,604,484 B2
- Document ID: US12604484B2
- Status: Granted
- Kind: B2
- Application number: 18/185,586
- Filed: 2023-03-17
- Published: 2024-02-22
- Granted: 2026-04-14
- Earliest claimed: 2022-08-22
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Kyooho Jung
- Web page: https://patentgrep.com/patent/US12604484B2

## CPC

- H10B 63/10: Phase change RAM [PCRAM, PRAM] devices
- H10D 1/68: Capacitors having no potential barriers
- H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays}
- H10B 12/033: {the capacitor extending over the transistor}
- H10B 12/31: {having a storage electrode stacked over the transistor}
- H10P 14/6544: {to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer}
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A data storage structure may include a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer. The dielectric layer may include a metal compound having a crystalline phase and including a first metal. The dielectric layer also may include a phase control material located in an interfacial region of the dielectric layer, adjacent to the upper electrode. The phase control material may include at least one of a second metal and a metal nitride. The second metal may be configured to induce a phase change in the metal compound of the dielectric layer. The metal nitride may include the second metal.

## Claims

### Claim 1

A data storage structure comprising:
a lower electrode;
a dielectric layer on the lower electrode; and
an upper electrode on the dielectric layer, the upper electrode including an upper electrode interfacial layer in contact with the dielectric layer, wherein
the dielectric layer includes a metal compound having a crystalline phase and including a first metal,
the dielectric layer further includes a phase control material located in an interfacial region of the dielectric layer, the interfacial region being in contact with the upper electrode interfacial layer,
the phase control material includes a second metal or a metal nitride,
the metal nitride includes the second metal, and
the upper electrode interfacial layer comprises a third metal and at least one of oxygen and nitrogen,
wherein the third metal comprises at least one of tin, molybdenum, niobium, tantalum, titanium, indium, nickel, cobalt, tungsten, ruthenium, zirconium and hafnium.

### Claim 2 (depends on 1)

The data storage structure of claim 1, wherein
the metal compound of the dielectric layer comprises at least one of hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanum aluminum oxide, zirconium oxide, zirconium silicon oxide, tantalum oxide, titanium oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.

### Claim 3 (depends on 1)

The data storage structure of claim 1, wherein the second metal of the phase control material comprises at least one of molybdenum, cobalt, zirconium, niobium, titanium, copper, tantalum, vanadium, aluminum, scandium, chromium, manganese, nickel, rubidium, strontium, ruthenium, indium, tin, tungsten, iridium, and lanthanum.

### Claim 4 (depends on 1)

The data storage structure of claim 1, wherein
the metal compound of the dielectric layer comprises titanium oxide, and
the second metal of the phase control material comprises molybdenum or cobalt.

### Claim 5 (depends on 1)

The data storage structure of claim 1, wherein the metal nitride comprising the second metal of the phase control material comprises at least one of molybdenum nitride, cobalt nitride, vanadium nitride, and ruthenium nitride.

### Claim 6 (depends on 1)

The data storage structure of claim 1, wherein the metal compound of the dielectric layer has a tetragonal crystal phase or an orthorhombic crystal phase.

### Claim 7 (depends on 1)

The data storage structure of claim 1, wherein the metal compound of the dielectric layer has a rutile phase.