# US 12,604,473 B2 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,604,473 B2 - Document ID: US12604473B2 - Status: Granted - Kind: B2 - Application number: 18/104,711 - Filed: 2023-02-01 - Published: 2024-03-14 - Granted: 2026-04-14 - Earliest claimed: 2022-09-08 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Hyun Sub Kim; Sun Woo Kim; Jin Ho Bin - Web page: https://patentgrep.com/patent/US12604473B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies} - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 63/84: {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} - H10N 70/011: {Manufacture or treatment of multistable switching devices} - H10N 70/253: {having three or more electrodes, e.g. transistor-like devices} - H10N 70/883: {Oxides or nitrides} - H10W 20/435: {Cross-sectional shapes or dispositions of interconnections} - H10B 43/40: characterised by the peripheral circuit region - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device may include a gate structure, a channel structure extending through the gate structure, a first hydrogen supply layer disposed on the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy, and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration. ## Claims ### Claim 1 A semiconductor device comprising: a gate structure comprising insulating layers and conductive layers that are alternately stacked; a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer; a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy; and a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration. ### Claim 2 (depends on 1) The semiconductor device of claim 1, further comprising: a second hydrogen supply layer disposed between the first hydrogen supply layer and the hydrogen blocking layer and having a third hydrogen concentration higher than the second hydrogen concentration. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the second hydrogen supply layer comprises an oxygen vacancy. ### Claim 4 (depends on 2) The semiconductor device of claim 2, wherein the second hydrogen supply layer comprises oxide or nitride. ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein the first hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride. ### Claim 6 (depends on 1) The semiconductor device of claim 1, further comprising: an interconnection structure disposed between the gate structure and the first hydrogen supply layer. ### Claim 7 A semiconductor device comprising: a gate structure comprising insulating layers and conductive layers that are alternately stacked; a channel structure extending through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer; a first hydrogen supply layer disposed over the gate structure and having a first hydrogen concentration; a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration; and a second hydrogen supply layer disposed between the first hydrogen supply layer and the hydrogen blocking layer and having a third hydrogen concentration higher than the second hydrogen concentration. ### Claim 8 (depends on 7) The semiconductor device of claim 7, wherein at least one of the first hydrogen supply layer and the second hydrogen supply layer comprises an oxygen vacancy. ### Claim 9 (depends on 7) The semiconductor device of claim 7, wherein the first hydrogen supply layer comprises oxide or nitride, the second hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride. ### Claim 10 (depends on 7) The semiconductor device of claim 7, further comprising: an interconnection structure disposed between the gate structure and the first hydrogen supply layer. ### Claim 11 A semiconductor device comprising: a gate structure comprising insulating layers and conductive layers that are alternately stacked; a plurality of channel structures passing through the gate structure and comprising a channel layer and a memory layer surrounding the channel layer; a first hydrogen supply layer disposed over the gate structure, having a first hydrogen concentration, and comprising an oxygen vacancy; and a second hydrogen supply layer disposed on the first hydrogen supply layer, wherein the second hydrogen supply layer comprises an oxygen vacancy. ### Claim 12 The semiconductor device of 11, further comprising: a hydrogen blocking layer disposed on the first hydrogen supply layer and having a second hydrogen concentration lower than the first hydrogen concentration. ### Claim 13 The semiconductor device of 12, wherein the second hydrogen supply layer having a third hydrogen concentration higher than the second hydrogen concentration. ### Claim 14 The semiconductor device of 12, wherein the first hydrogen supply layer comprises oxide or nitride, the second hydrogen supply layer comprises oxide or nitride, and the hydrogen blocking layer comprises nitride.