Technologies for impedance matching networks for qubits

An apparatus comprising:

• an impedance matching network comprising:
• an input;
• an output;
• a first capacitor connected to the input and a ground, wherein the first capacitor is a variable capacitor;
• a second capacitor connected to the input and the output;
• and
• an inductor connected to the output and the ground;
• a spin qubit coupled to the output of the impedance matching network;
• and
• a component coupled to the spin qubit,
• wherein the second capacitor and the inductor each has a Q factor of at least one thousand when at an operating temperature of the impedance matching network,
• wherein the component coupled to the spin qubit is associated with a first resistance corresponding to a first qubit state of the spin qubit and a second resistance corresponding to a second qubit state of the spin qubit, wherein the first resistance is lower than the second resistance,
• wherein the output of the impedance matching network is connected to the component coupled to the spin qubit,
• wherein the impedance matching network transforms an impedance of the component coupled to the spin qubit to a characteristic impedance of a transmission line of a measurement network at a matching frequency of the impedance matching network when the component coupled to the spin qubit has the first resistance,
• wherein the first resistance is at least 100 kiloohms.